Development of large-area quadrant silicon detectorfor charged particles

BAO Peng-Fei; LIN Cheng-Jian; YANG Feng; GUO Zhao-Qiao; GUO Tian-Shu; YANG Lei; SUN Li-Jie; JIA Hui-Ming; XU Xin-Xing; MA Nan-Ru; ZHANG Huan-Qiao; LIU Zu-Hua

doi:10.1088/1674-1137/38/12/126001

Chinese Physics C> 2014, Vol. 38> Issue(12) : 126001 DOI: 10.1088/1674-1137/38/12/126001

Development of large-area quadrant silicon detectorfor charged particles

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The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area. The leakage current under the full depletion bias voltage of -16 V is about 2.5 nA, and the rise time is better than 160 ns. The energy resolution for a 5.157 MeV α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region. Such an event is only about 0.6% of all events and can be neglected in an actual application.

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BAO Peng-Fei, LIN Cheng-Jian, YANG Feng, GUO Zhao-Qiao, GUO Tian-Shu, YANG Lei, SUN Li-Jie, JIA Hui-Ming, XU Xin-Xing, MA Nan-Ru, ZHANG Huan-Qiao and LIU Zu-Hua. Development of large-area quadrant silicon detectorfor charged particles[J]. Chinese Physics C, 2014, 38(12): 126001. doi: 10.1088/1674-1137/38/12/126001

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Received: 2014-01-27
Revised: 2014-05-04

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沈阳化工大学材料科学与工程学院沈阳 110142

Development of large-area quadrant silicon detectorfor charged particles

Corresponding author: LIN Cheng-Jian,

Received Date: 2014-01-27
Accepted Date: 2014-05-04
Available Online: 2014-12-05

Abstract: The quadrant silicon detector, a kind of passivated implanted planar silicon detector with quadrant structure on the junction side, gained its wide application in charged particle detection. In this paper, the manufacturing procedure, performance test and results of the quadrant silicon detector developed recently at the China Institute of Atomic Energy are presented. The detector is about 300 μm thick with a 48 mm×48 mm active area. The leakage current under the full depletion bias voltage of -16 V is about 2.5 nA, and the rise time is better than 160 ns. The energy resolution for a 5.157 MeV α-particle is around the level of 1%. Charge sharing effects between the neighboring quads, leading to complicated correlations between two quads, were observed when α particles illuminated on the junction side. It is explained as a result of distortion of the electric field of the inter-quad region. Such an event is only about 0.6% of all events and can be neglected in an actual application.