Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

HE Wei; ZHANG Zheng-Xuan; ZHANG En-Xia; QIAN Cong; TIAN Hao; WANG Xi

Chinese Physics C> 2007, Vol. 31> Issue(4) : 388-390

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

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Abstract：
The total dose response characteristics of the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers have been improved by implanting silicon ion into the BOX layers. NMOS/SOI transistors with enclosed-gate structure fabricated in SIMOX wafers were exposed to ⁶⁰Co γ-ray radiation. The total-dose radiation hardness of the BOX layers is characterized by the current voltage (I-V) measurements. The experimental results show that the implantation of silicon ion into the BOX layers can greatly reduce back channel threshold voltage shifts (ΔV_th), which increase the BOX layer hardness to total-dose irradiation.

References

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. MA T P, Ressendorfer P V. Ionizing Radiation Effects in MOS Devices and Circuits. John Wiley Sons, Inc., 1989.47-86.2. Giraldo A, Paccagnella A, Minzoni A. Solid-State Electronics, 2000, 44: 981-989.3. Mcwhorter P J, Winokur P S. Appl. Phys. Lett., 1986,48(2): 133-135.4. LIU S T, Balster S, Sinha S et al. IEEE Trans. Nucl. Sci.,1999, 46(6): 1817-1823.5. Nicklaw C J, Pagey M P, Pantelides S T et al. IEEE Trans.Nucl. Sci., 2000, 47(6): 2269-2275.

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HE Wei, ZHANG Zheng-Xuan, ZHANG En-Xia, QIAN Cong, TIAN Hao and WANG Xi. Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation[J]. Chinese Physics C, 2007, 31(4): 388-390.

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Received: 2006-07-14
Revised: 2006-08-28

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沈阳化工大学材料科学与工程学院沈阳 110142

Improvement of the Radiation Hardness of SIMOX Buried Oxides by Silicon Ion Implantation

Corresponding author: HE Wei,

Shanghai Institute of Microsystems and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2006-07-14
Accepted Date: 2006-08-28
Available Online: 2007-04-05

Abstract: The total dose response characteristics of the buried oxides (BOX) in separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers have been improved by implanting silicon ion into the BOX layers. NMOS/SOI transistors with enclosed-gate structure fabricated in SIMOX wafers were exposed to ⁶⁰Co γ-ray radiation. The total-dose radiation hardness of the BOX layers is characterized by the current voltage (I-V) measurements. The experimental results show that the implantation of silicon ion into the BOX layers can greatly reduce back channel threshold voltage shifts (ΔV_th), which increase the BOX layer hardness to total-dose irradiation.