The Study of the Silicon Microstrip Detector

MAO Yu-Fang; GUO Zhao-Qiao; ZHANG Xiu-Feng

Chinese Physics C> 1993, Vol. 17> Issue(9) : 784-789

The Study of the Silicon Microstrip Detector

Institute of High Energy physios,Beijing 100039Institute of Atomic Energy,Beijing 102413

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Abstract：
A silicon microstrip detector has been fabricated by the new method of planar process.A high-ohmic (～3kΩ.cm)n-doped silicon crystal,oriented in the <111> direction and 400μm thick is used as base material.The sensitive area of the detector (18mm×12mm)is covered with p⁺ implanted diode strips and Al contacts (300 strips,20μm width and 40μm pitch).The leakage current is 5×10^－9A at the reverse bias voltage of 100V.The distribution of charge collections of the silicon microstrip detector was measured and 5.3μm of the spatial resolution was obtained.

References

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J. Kemmer and G. Lutz, Nucl. Instr, and Meth. A273(1988),588.[2]Mituhiro Nakamura, Yasuhiro Tomita and Kimio Niwa,Nucl. Instr. and Meth. A270(1988),42.[3]B. Hyams and U. Koetz et al.，Nucl.lnstr, and Meth. ,205(1983),99.[4]Lnis Labarga et al. ,IEEE Trans. on Nucl.Sci. ,NS-38(1991),25.[5]J. Kemmer, Nucl.lnstr. and Meth. ,169(1980),499.[6]J. Kemmer, P. Burger, P. Henck and E. Heijne,lEEE Trans on Nucl.Sci. ,NS-29(1982),733.[7]B. S. Avset L. Evensen V. Chcbaud H. Dijkstra et al. ,IEEE Trans. on Nucl. Sci. ,NS-37(1990),1153.[8]G. Hall,Nucl. Instr and Meth. A273(1988),559.[9]Emilio Gatti and Pavel Rehak, Nucl.Instr. and Meth. ,225(1984),608.[10]G. Lutz and A. S. Sohwarz, ECFA Study Week, CERN 89-10 Vo1.1,272.[11]E. Belau R. Klanner, G. Lutz,E. Neugebauer et al. ,Nucl.lnstr,and Meth. ,214(1983),253.[12]毛裕芳，硅微条探测器的电荷收集，第五届全国核电子学和核探测技术学术会议论文集,1990. 8兰州.

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MAO Yu-Fang, GUO Zhao-Qiao and ZHANG Xiu-Feng. The Study of the Silicon Microstrip Detector[J]. Chinese Physics C, 1993, 17(9): 784-789.

MAO Yu-Fang, GUO Zhao-Qiao and ZHANG Xiu-Feng. The Study of the Silicon Microstrip Detector[J]. Chinese Physics C, 1993, 17(9): 784-789. shu

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Received: 1900-01-01
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

The Study of the Silicon Microstrip Detector

Corresponding author: MAO Yu-Fang,

Institute of High Energy physios,Beijing 100039Institute of Atomic Energy,Beijing 102413

Received Date: 1900-01-01
Accepted Date: 1900-01-01
Available Online: 1993-09-05

Abstract: A silicon microstrip detector has been fabricated by the new method of planar process.A high-ohmic (～3kΩ.cm)n-doped silicon crystal,oriented in the <111> direction and 400μm thick is used as base material.The sensitive area of the detector (18mm×12mm)is covered with p⁺ implanted diode strips and Al contacts (300 strips,20μm width and 40μm pitch).The leakage current is 5×10^－9A at the reverse bias voltage of 100V.The distribution of charge collections of the silicon microstrip detector was measured and 5.3μm of the spatial resolution was obtained.