Microstructures of Ge/Si Superlattices Growtn at Low Temperature

WU Xiao-Shan; TAN Wei-Shi; JIANG Shu-Sheng; WU Zhong-Hua; DING Yong-Fan

Chinese Physics C> 2003, Vol. 27> Issue(8) : 739-743

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Abstract
HTML
Reference
Related

PDF

Abstract：
Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.

References

[1]

Thanh V Le, Yam V, Boueaud P et al. Phys. Rev., 1995, B60:58512 Schmidt O G, Kienzle O, Hao Y et al. Appl. Phys. Lett., 1999, 74:12723 Mateeva E, Sutter P, Lagally M G. Appl. Phys. Lett., 1999, 74:567 4 Schittenhelm P, Gail M, Brurmer Jet al. Growth, 1995, 157:2605 Sunamura H, Fukatsu S, Usami N et al. Growth, 1995, 157:265 6 LIU F, WU F, Lagally M G. Chem. Rev., 1997, 97:1045 7 CHENG H H, Chia C T, Markov V A. Thin Solid Films, 2000, 369:1828 Soo Y L, Kioseoglou G, Huang S. Appl. Phys. Lett., 2001, 78:3684 9 ZHENG Wen–Li, JIA Quan–Jie, JIANG Xiao–Ming et al. High Energy Phys. and Nucl. Phys., 2001, 25(12) : 1231–1237(in Chinese)(郑文莉等.高能物理与核物理,2001,25(12) :1231–1237) 10 WU X S, BIE Q S, LIN Z S et sl. Mod. Phys. Lett., B 1999, 13:325

[1]	GUO Yun-Jun , HE Kang-Lin . Muon Identification Using the Efficiencies Ratio Method at BESⅡ. Chinese Physics C, 2007, 31(11): 1050-1055.
[2]	HUANG Wen-Xue , WANG Yue , ZHU Zhi-Chao , TIAN Yu-Lin , XU Hu-Shan , SUN Zhi-Yu , XIAO Guo-Qing , ZHAN Wen-Long . Experimental Study of the High-Voltage Breakdown and Simulations for the RFQ Cooler and Buncher RFQ1L. Chinese Physics C, 2006, 30(S2): 261-264.
[3]	LIU Chang-Long , LU Yi-Ying , YIN LI . Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon. Chinese Physics C, 2005, 29(11): 1107-1111.
[4]	LI Ming-Liang , ZHU Sheng-Jiang , CHE Xing-Lai , YU Ying-Nan . Research on Two-Quasiparticle Bands in ⁹⁸Sr. Chinese Physics C, 2004, 28(S1): 75-77.
[5]	SHEN Shui-Fa , YU Xiao-Han . Decay of ⁸³Sr and Discussion of Its Daughter's Band Structures. Chinese Physics C, 2004, 28(S1): 78-80.
[6]	Medina Ablikim , HUANG Wei-Cheng , . New Realization of N=2 Supersymmetric QuantumMechanics and Shape Invariance. Chinese Physics C, 2002, 26(4): 338-345.
[7]	Yang Jianjun , Ma Boqiang , Li Guanglie . Non-perturbative Quark Propagator and the Study of the Non-trivial Q² Dependence in the Nucleon Structure Functions. Chinese Physics C, 1997, 21(2): 146-156.
[8]	Li Yangguo . Antiproton -Nucleus Charge Exchange Reaction and Inelastic Scattering. Chinese Physics C, 1996, 20(11): 1021-1027.
[9]	BES Collaboration . Experimental Study of Resonance f₂(1270) in the J/ψ Hadronic Decay. Chinese Physics C, 1993, 17(2): 97-106.
[10]	HOU Ren-Chang , ZHAO Xuan . QUADRUPOLE-OCTUPOLE TWO-PHONON EXCITATIONS IN INELASTIC SCATTERING. Chinese Physics C, 1983, 7(2): 236-244.
[11]	Sa Ben-hao , Zhang Xi-zhen , Li Zhu-xia , Shi Yi-jin . A PRIMARY RESEARCH OF THE PHONON RENORMALIZATION OF NUCLEAR FIELD THEORY. Chinese Physics C, 1980, 4(3): 398-400.

Access

Get Citation

WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743.

WU Xiao-Shan, TAN Wei-Shi, JIANG Shu-Sheng, WU Zhong-Hua, DING Yong-Fan and Microstructures of Ge/Si Superlattices Growtn at Low Temperature[J]. Chinese Physics C, 2003, 27(8): 739-743. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2002-11-22
Revised: 1900-01-01

Article Metric

Article Views(3625)
PDF Downloads(584)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Microstructures of Ge/Si Superlattices Growtn at Low Temperature

Corresponding author: WU Xiao-Shan,

Lab of Solid Slate Microstructures, Nanjing Univereity, Nanjing 210093, China2 Institute of High Energy Physics, CAS, Beijing 100039, China3 Center for Condensed Matter Science, Taiwan University, Taipei

Received Date: 2002-11-22
Accepted Date: 1900-01-01
Available Online: 2003-08-05

Abstract: Si/Ge superlattices were grown at low temperature with modified Stranski-Krastanov (SK) MBE method. X-ray specular, off-specular reflectivity, and X-ray transverse scattering measurements were done to characterize the structure of the Ge/Si superlat-tice. The fitted roughness and the thickness of the Ge-layer indicate that Ge may diffuse into Si-layer and form the inverted trapezium or nano-scaled hut at the Si/Ge interface. The inverted trapezium extends to form islands, which can be estimated from the volume of the Ge-Si alloy in the structure. These islands can be averaged as a Ge-Si alloy sub-layer, the averaged thickness was fitted from the pure X-ray specular reflectivity. The composition of Ge in the SiGe dots was estimated as 15%-25% by X-ray specular reflectivity and by the thickness of Ge sub-layer. These results were confirmed by TEM observation.