Analysing Depth Profile of Hydrogen in Materals by Elastic Recoil Detection

Liu Shijie; Wu Yue; Sheng Kanglong; Li Chunying

Chinese Physics C> 1989, Vol. 13> Issue(S2) : 131-138

Analysing Depth Profile of Hydrogen in Materals by Elastic Recoil Detection

1. Institute of High Energy Physics, Chinese Acadmy of Sciences, Beijing;
2. Institute of Nuclear Research, Chinese Acadmy of Sciences, Shanghai;
3. North China Electro-Optics Research Institute, Beijing

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Abstract：
The elastic recoil detection (ERD) by using a 2.0-2.5 MeV 4He ion beam has been performed to detect the depth profile of hydrogen in the silicon oxide and silicon nitride films. The correlation between the hydrogen content and deposition condition is given. Maximum probing depth, detection limit and depth resolution are discussed under our experiment conditions.
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Liu Shijie, Wu Yue, Sheng Kanglong and Li Chunying. Analysing Depth Profile of Hydrogen in Materals by Elastic Recoil Detection[J]. Chinese Physics C, 1989, 13(S2): 131-138.

Liu Shijie, Wu Yue, Sheng Kanglong and Li Chunying. Analysing Depth Profile of Hydrogen in Materals by Elastic Recoil Detection[J]. Chinese Physics C, 1989, 13(S2): 131-138. shu

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Received: 1988-05-23

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Supported by Science Fund of Chinese Academy of Sciences

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沈阳化工大学材料科学与工程学院沈阳 110142

Analysing Depth Profile of Hydrogen in Materals by Elastic Recoil Detection

1. Institute of High Energy Physics, Chinese Acadmy of Sciences, Beijing;
2. Institute of Nuclear Research, Chinese Acadmy of Sciences, Shanghai;
3. North China Electro-Optics Research Institute, Beijing

Received Date: 1988-05-23

Fund Project: Supported by Science Fund of Chinese Academy of Sciences

Abstract: The elastic recoil detection (ERD) by using a 2.0-2.5 MeV 4He ion beam has been performed to detect the depth profile of hydrogen in the silicon oxide and silicon nitride films. The correlation between the hydrogen content and deposition condition is given. Maximum probing depth, detection limit and depth resolution are discussed under our experiment conditions.