Formation of Boron Nitride Nanostructures by Means of 60keV N2+ Ion Beam Bombardment

WANG Zhen-Xia; WANG Wen-Min; RUAN Mei-Ling

Chinese Physics C> 2001, Vol. 25> Issue(2) : 174-178

Formation of Boron Nitride Nanostructures by Means of 60keV N2+ Ion Beam Bombardment

Shanghai Institute of Nuclear Research, The Chinese Academy of Sciences, Shanghai 201800, China2 State Key Laboratory for High Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics, The Chinese Academy of Sciences, Shanghai 200050, China

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Abstract：
The formation of bended BN nanostructures and small BN cage-like molecules, under Nc2+ ion-bombardment of BN samples, is reported. The analysis of high-resolution transmission electron microscopy indicates that bending the flat sp2 layers with strain or lattices defects directly under the mechanical deformation forms these BN nanostructures. In addition, the cages in diamlter range from about 0.4 to 1.8nm, closing to those of the B₁₂ N₁₂, B₁₆N₁₆, and B₂₀₈N₂₀₈ octahedral, were observed. The origins of the bended BN sheets and small BN cages were discussed based on the viewpoint of beam-solid interaction.

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WANG Zhen-Xia, WANG Wen-Min and RUAN Mei-Ling. Formation of Boron Nitride Nanostructures by Means of 60keV N2+ Ion Beam Bombardment[J]. Chinese Physics C, 2001, 25(2): 174-178.

WANG Zhen-Xia, WANG Wen-Min and RUAN Mei-Ling. Formation of Boron Nitride Nanostructures by Means of 60keV N2+ Ion Beam Bombardment[J]. Chinese Physics C, 2001, 25(2): 174-178. shu

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Received: 2000-01-04
Revised: 1900-01-01

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