FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

ZHAO Zhi-Ming; WANG Zhi-Guang; SONG Yin; JIN Yun-Fan; SUN You-Mei

Chinese Physics C> 2005, Vol. 29> Issue(8) : 824-829

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China2 CIRIL,BP5133,14070 Caen Cedex 05,France3 The Graduated School of Chinese Academy of Sciences,Beijing 100049，China

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Abstract：
SiO₂ films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO₂ films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO₂ films after high-energy Pb ion irradiation. It was also found that CO₂ molecule was formed in the high dose C-doped SiO₂ films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO₂ molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO₂ films after high-energy Pb ion irradiation.

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[1]

Canham L T. App.Phys.Lett. ,1990, 57:10462 Cullis A G, Canham L T, Calott D J. J . Appl. Phys.，1997, 82(3):9093 Brus L. J. Phys. Chem.，1994, 98:35154 Coffa S, Franzò C, Priolo F et al. Nucl. Instrum. Methods, 1996,B120:74-80; Komoda T, Weber J,Homewood K P et al. Nucl.Instorm. Methods,1996, B120:93-96; Tsutomu Shimizu-Iwayama, Setsuo Nakao, Kazuo Saitoh. Nucl.Instrum. Methods,1996, B120:97-100; Garrido B, López M, Ferre S et al. Nucl. Instmm. Methods,1996, B120:101-105; Skompa W, Yankov R A, Rebohle L et al.Nucl. Instrum. Methods,1996, B120:106-109; Barklie R C. Nucl.Instrum. Methods,1996, B120:139-1465 Garrido B, López M. Nucl. Instmm. Methods, 2004, B216:2136 XIE Er-Qing, WANG Zhi-Guang, JIN Yun-Fan. Nuclear Physics Review, 1998, 15(3):166 (in Chinese)(谢二庆，王志光，金运范.原子核物理评论.1998, 15(3):166)7 JIN Yun-Fan, WANG Zhi-Guang. Nuclear Physics Review, 1998,15(2):88 (in Chinese)(金运范，王志光.原子核物理评论.1998, 15(2):88)8 WANG Zhi-Guang, JIN Yun-Fan, HOU Ming-Dong. Nuclear Physics Review, 2000, 17(2):100(in Chinese)(王志光，金运范，侯明东.原子核物理评论.2000, 17(2):100)9 Tarus J, Nordlund K, Keinonen J et al. Nucl. Instmm. Methods,2000,B164:165; Girard J C, Michel A, Tromas C et al. Nucl. Instrum. Methods,2003, B209:85;Som T, Satpati B, Satyam P V et al.Nucl. Instmm. Methods,2003, B212:15110 WANG Zhi-Guang et al. Nuclear Physics Review, 2000, 17(2):189(in Chinese)(王志光等.原子核物理评论.2000, 17(2):189)11 WANG Z G et al. Nucl. Instrum. Methods,2001，B179:L289; WANG Z G, LIU J, ZHU Z Y et al. Nucl. Instmm. Methods,2002, B191:396; WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instmm. Methods,2002, B193:685; WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods,2003, B209:20012 KE Yi-Kan, DONG Hui-Ru. Spectral Analysis. Beijing: Chemical Industry Press,1998 (in Chinese)(柯以侃，董慧茹.光谱分析.北京:化学工业出版社出版，1998)13 Lucovsky G, YANG J, CHAO S S et al. Phys. Rev.，1983,B28(6):322514 Lucovsky G, Manitini M J, Srivastava J K et al. J. Vac. Sci. Tech.，1987, B5:53015 Bullot J, Schmidt M P. Phys. Status. Solidi.，1987, B143:34516 IR Frequencies. www. personal. PSU. edu17 GUAN Zheng-Pin, CAI Guo-Qiang, WU Wen-Fa et al. Nanometer Communication, 2004 ,11(1):1 (in Chinese)(管正平，蔡国强，吴文发等纳米通讯，2004,11(1):1)18 WANG Jian-Jun, Rangel E C, da Cruz N C et al. Nucl. Instnum.Methods, 2000, B166-167:42019 YU M B et al. Thin Solid Films, 2000, 377-378:17720 WANG Zhi-Guang et al. IMPHIRFL Annual Report . 2003 , 55

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ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829.

ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829. shu

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Received: 2004-11-25
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

Corresponding author: ZHAO Zhi-Ming,

Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China2 CIRIL,BP5133,14070 Caen Cedex 05,France3 The Graduated School of Chinese Academy of Sciences,Beijing 100049，China

Received Date: 2004-11-25

Accepted Date: 1900-01-01

Available Online: 2005-08-05

Abstract: SiO₂ films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO₂ films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO₂ films after high-energy Pb ion irradiation. It was also found that CO₂ molecule was formed in the high dose C-doped SiO₂ films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO₂ molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO₂ films after high-energy Pb ion irradiation.

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FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

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