Paramagnetic Defect Production in Silicon After112MeV Ar Ion Irradiation

Liu Changlong; Hou Mingdong; Zhu Zhiyong; Cheng Song; Li Baoquan; Sun Youmei; Wang Zhiguang; Jin Yunfan; Li Changlin; Wang Yinshu; Meng Qinghua

Chinese Physics C> 1998, Vol. 22> Issue(9) : 858-863

Paramagnetic Defect Production in Silicon After112MeV Ar Ion Irradiation

Institute of Modern Physics. The Chinese Academy of Sciences, Lanzhou 730000

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Abstract：
Electron Paramagnetic Resonance has been used to investigate the defects produced in silicon by irradiation with 12MeV Ar ions below 50K. Several kinds of defects, which include the neutral 4-vacancy (Si-P3center), amorphous center and etc. are observed in the as-irradiated samples. The Si-P3 center is distributed in the regions where electronic stopping power dominates and is annealed out at about 200℃. Accompanied by the disappearance of the Si-P3 center, the complex vacancy clusters, such as Si-P1 center and Si-A11 center begin to grow. The recrystallization of the isolated amorphous region occurs at 350℃. The radius of the produced amorphous region for low fluence Ar ion irradiated sample is evaluated and it is distributed in the range from 16 to 20A. The results are qualitatively discussed.

References

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Liu Changlong, Hou Mingdong, Zhu Zhiyong, Cheng Song, Li Baoquan, Sun Youmei, Wang Zhiguang, Jin Yunfan, Li Changlin, Wang Yinshu and Meng Qinghua. Paramagnetic Defect Production in Silicon After112MeV Ar Ion Irradiation[J]. Chinese Physics C, 1998, 22(9): 858-863.

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Received: 1900-01-01
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Paramagnetic Defect Production in Silicon After112MeV Ar Ion Irradiation

Corresponding author: Liu Changlong,

Institute of Modern Physics. The Chinese Academy of Sciences, Lanzhou 730000

Received Date: 1900-01-01
Accepted Date: 1900-01-01
Available Online: 1998-09-05

Abstract: Electron Paramagnetic Resonance has been used to investigate the defects produced in silicon by irradiation with 12MeV Ar ions below 50K. Several kinds of defects, which include the neutral 4-vacancy (Si-P3center), amorphous center and etc. are observed in the as-irradiated samples. The Si-P3 center is distributed in the regions where electronic stopping power dominates and is annealed out at about 200℃. Accompanied by the disappearance of the Si-P3 center, the complex vacancy clusters, such as Si-P1 center and Si-A11 center begin to grow. The recrystallization of the isolated amorphous region occurs at 350℃. The radius of the produced amorphous region for low fluence Ar ion irradiated sample is evaluated and it is distributed in the range from 16 to 20A. The results are qualitatively discussed.