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Chinese Physics C> 2006, Vol. 30> Issue(5) : 476-480 

MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO2 Matrix

  •  Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China

  • The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO2 matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO2 host matrix are mainly due to the interaction of InSb NPs and a-SiO2 matrix.It can be interpreted as both a local single-site effect on μ0(E) due to the effect of a-SiO2 matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO2 matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles.
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    [1] . ZHU Kai-Gui et al. Chinese Phys. Lett., 2001, 18(6): 7792. ZHU Kai-Gui, SHI Jian-Zhong, ZHANG Li-De. Solid State Commun., 1998, 107(2): 793. Alphandéy E et al. Appl. Phys. Lett., 1999, 74: 20414. Alphandéry E et al. Phys. Rev., 2002, B65: 115322-1-75. Child R A, Nicholas R J, Mason N J et al. Phys. Rev.,2003, B68: 165307-1-56. ZHANG P et al. Phys. Rev. Lett., 2003, 90: 245502-1-47. ZHANG H et al. Nature, 2003, 424: 10258. Daldoss N et al. Phys. Rev., 2003, B68: 085327-1-89. Scamarcio G et al. Phys. Rev., 1992, B45: 1379210. Holland B W, Pendry J B, Pettifer R F et al. J. Phys.,1978, C11(3): 633-64211. Rehr J J et al. Phys. Rev., 1994, B49: 1234712. Filipponi A, Di Cicco D. Phys. Rev., 1996, B53: 9466-946713. Ankudinov A L et al. Phys. Rev. Lett., 2001, 86: 1642

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CHEN Dong-Liang, WU Zi-Yu and WEI Shi-Qiang. MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO2 Matrix[J]. Chinese Physics C, 2006, 30(5): 476-480.
CHEN Dong-Liang, WU Zi-Yu and WEI Shi-Qiang. MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO2 Matrix[J]. Chinese Physics C, 2006, 30(5): 476-480. shu
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Received: 2005-08-22
Revised: 2005-10-11
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MS-XANES Studies on the Interface Effect of Semiconductor InSb Nanoparticles Embedded in a-SiO2 Matrix

    Corresponding author: CHEN Dong-Liang,
  • Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China2 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
  • Received Date: 2005-08-22
  • Accepted Date: 2005-10-11
  • Available Online: 2006-05-05

Abstract: The interface effect of semiconductor InSb nanoparticles (NPs) embedded in a-SiO2 matrix was investigated via multi-scattering XANES simulations. The results show that the white line increase and broadening to higher energies of InSb NPs embedded in a-SiO2 host matrix are mainly due to the interaction of InSb NPs and a-SiO2 matrix.It can be interpreted as both a local single-site effect on μ0(E) due to the effect of a-SiO2 matrix on Sb intra-atomic potential and the increase in 5p-hole population due to 5p-electron depletion in Sb for the InSb NPs embedded in SiO2 matrix. On the other hand, our result reveals evidently that it is not reasonable to estimate the 5p-hole counts only according to the intensity of the white line due to the interface effect of nanoparticles.

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