Study on Pores and Defect by Synthrotron Radiation Small Angle Reflection Method and Slow Positron Annihilation Technique

ZHOU Chun-Lan; WANG Dan-Ni; HE Chuang-Xin; WANG Bao-Yi; WEI Long; HE Qing; JIA Quan-Jie

Chinese Physics C> 2003, Vol. 27> Issue(S1) : 67-71

Study on Pores and Defect by Synthrotron Radiation Small Angle Reflection Method and Slow Positron Annihilation Technique

Institute of High Energy Physics,CAS,Beijing 100039,China

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Abstract：
We measured the X-ray small angle refection (XRR) in Beijing Synchrotron Radiation facility (BSRF) and the Doppler broaden of positron in Beijing slow positron beam with ²²Na radiation source for pore SiO_x(1≤x≤1.6) film prepared by radio-frequency sputtering at different Ar pressures.The result of XRR showed that with the Ar pressures increasing,densities of films were decreasing and porosity were increasing.Positron annihilation result S parameters were decreasing with Ar increasing,this contributed to the paramagnetic defect E' center reducing Ps production.Comparing with the thickness of films with XRR method and slow positron annihilation analyzing program VEPFIT,it showed that the results were consistency and the result of VEPFIT was samller.

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ZHOU Chun-Lan, WANG Dan-Ni, HE Chuang-Xin, WANG Bao-Yi, WEI Long, HE Qing and JIA Quan-Jie. Study on Pores and Defect by Synthrotron Radiation Small Angle Reflection Method and Slow Positron Annihilation Technique[J]. Chinese Physics C, 2003, 27(S1): 67-71.

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Received: 2003-11-21
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study on Pores and Defect by Synthrotron Radiation Small Angle Reflection Method and Slow Positron Annihilation Technique

Corresponding author: ZHOU Chun-Lan,

Institute of High Energy Physics,CAS,Beijing 100039,China

Received Date: 2003-11-21
Accepted Date: 1900-01-01
Available Online: 2003-01-02

Abstract: We measured the X-ray small angle refection (XRR) in Beijing Synchrotron Radiation facility (BSRF) and the Doppler broaden of positron in Beijing slow positron beam with ²²Na radiation source for pore SiO_x(1≤x≤1.6) film prepared by radio-frequency sputtering at different Ar pressures.The result of XRR showed that with the Ar pressures increasing,densities of films were decreasing and porosity were increasing.Positron annihilation result S parameters were decreasing with Ar increasing,this contributed to the paramagnetic defect E' center reducing Ps production.Comparing with the thickness of films with XRR method and slow positron annihilation analyzing program VEPFIT,it showed that the results were consistency and the result of VEPFIT was samller.