Voids in α–Al2O3 Irradiated by 85 MeV 19F Ions

WANG Rong; XU Yong-Jun; ZHU Jia-Zheng; ZHENG Yong-Nan; ZHOU Dong-Mei; ZHU Sheng-Yun

Chinese Physics C> 2003, Vol. 27> Issue(7) : 649-652

Voids in α–Al₂O₃ Irradiated by 85 MeV ¹⁹F Ions

China Institute of Atomic Energy, Beijing 102413, China2 Advanced Science Research Center, JAERI, Japan3 Department of Physics, Osaka University, Toyonaka, Japan

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Abstract：
The voids in α-Al₂O₃ irradiated by 85 MeV ¹⁹F ions of 5.28×10¹⁶cm^－2 have been observed during the post-annealing by a positron annihilation lifetime technique for the first time. The voids start to appear at 450℃. The void radius keeps nearly constant at ～0.29nm and the number of voids increases with increasing the annealing temperature from 550℃ to 750℃. Afterwards, the radius of voids increases rapidly with the annealing temperature and reaches 1.10nm at 1050℃.

References

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WANG Rong, XU Yong-Jun, ZHU Jia-Zheng, ZHENG Yong-Nan, ZHOU Dong-Mei and ZHU Sheng-Yun. Voids in α–Al₂O₃ Irradiated by 85 MeV ¹⁹F Ions[J]. Chinese Physics C, 2003, 27(7): 649-652.

WANG Rong, XU Yong-Jun, ZHU Jia-Zheng, ZHENG Yong-Nan, ZHOU Dong-Mei and ZHU Sheng-Yun. Voids in α–Al₂O₃ Irradiated by 85 MeV ¹⁹F Ions[J]. Chinese Physics C, 2003, 27(7): 649-652. shu

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Received: 2002-09-24
Revised: 1900-01-01

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Voids in α–Al₂O₃ Irradiated by 85 MeV ¹⁹F Ions

Corresponding author: ZHU Sheng-Yun,

China Institute of Atomic Energy, Beijing 102413, China2 Advanced Science Research Center, JAERI, Japan3 Department of Physics, Osaka University, Toyonaka, Japan

Received Date: 2002-09-24
Accepted Date: 1900-01-01
Available Online: 2003-07-05

Abstract: The voids in α-Al₂O₃ irradiated by 85 MeV ¹⁹F ions of 5.28×10¹⁶cm^－2 have been observed during the post-annealing by a positron annihilation lifetime technique for the first time. The voids start to appear at 450℃. The void radius keeps nearly constant at ～0.29nm and the number of voids increases with increasing the annealing temperature from 550℃ to 750℃. Afterwards, the radius of voids increases rapidly with the annealing temperature and reaches 1.10nm at 1050℃.