Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors
- Received Date: 2006-12-05
- Accepted Date: 2007-03-09
- Available Online: 2007-10-05
Abstract: The response of three semiconductor materials, polycrystalline HgI2, amorphous Se and polycrystalline CdTe, used for large area direct conversion detectors, is simulated by Monte Carlo method for X-ray photons in the diagnostic energy range (10—100keV). The simulation involves the transmission spectra, backscatting spectra, absorption efficiency and charge sensitivity. The interaction process between X-ray photons and the conversion materials is simulated by EGSnrc Monte Carlo code system and for the generation of signal charges Gaussian noise and the collection of partial charges are taken into account. The results show that deep traps in materials can affect largely detecting sensitivity when the mean free length (Schubweg) of carriers is less than the materials thickness. The sensitivity of HgI2 is 5 times higher than that of amorphous Se and CdTe is 10 times higher than amorphous Se, it can be seen that a high Z material can improve the detecting sensitivity greatly.