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Chinese Physics C> 2007, Vol. 31> Issue(10) : 933-937 

Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors

  •  Institute of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China2 Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China

  • The response of three semiconductor materials, polycrystalline HgI2, amorphous Se and polycrystalline CdTe, used for large area direct conversion detectors, is simulated by Monte Carlo method for X-ray photons in the diagnostic energy range (10—100keV). The simulation involves the transmission spectra, backscatting spectra, absorption efficiency and charge sensitivity. The interaction process between X-ray photons and the conversion materials is simulated by EGSnrc Monte Carlo code system and for the generation of signal charges Gaussian noise and the collection of partial charges are taken into account. The results show that deep traps in materials can affect largely detecting sensitivity when the mean free length (Schubweg) of carriers is less than the materials thickness. The sensitivity of HgI2 is 5 times higher than that of amorphous Se and CdTe is 10 times higher than amorphous Se, it can be seen that a high Z material can improve the detecting sensitivity greatly.
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    [1] . Haghigat A, Jeraj R, NewhauserWet al. Med. Phys., 2006,33: 21322. Strigari Lidia, Menghi Enrico, D'Andrea Marco et al. Med.Phys., 2006, 33: 33833. Kum. Med. Phys., 2006, 33: 21224. Ay M R, Sarkar S, Shahriari M et al. Med. Phys., 2005, 32:16605. Korn Alexander, Giersch Juergen, Hoheisel Martin. Proc.SPIE, 2005, 5745: 2926. Hoheisel Martin, Giersch Jurgen, Mitschke Michaela et al.Proc. SPIE, 2004, 5368: 3867. Guerra Del, Nelson W R, Russso P. Nuclear Instrumentsand Methods in Physics Research, 1991, A306: 3788. Conti M, Guerra A Del, Mazzei D et al. Nuclear Instru-ments and Methods in Physics Research, 1992, A322: 5919. Olmos P, Perez J M, Garcia-Belmonte G et al. Nuclear In-struments and Methods in Physics Research, 1991, A302:9110. Fano U. Phys. Rev., 1947, 72: 2611. Cavalleri G, Gatti E, Fabri G et al. Nucl. Instrum. Meth-ods, 1971, 92: 13712. Kasap S O. J. Phys. D: Appl. Phys., 2000, 33: 285313. Lederer C M, Shirley V S. Table of Isotopes. 7th Edition.New York: Wiley, 1978, 414. Storm E, Israel H I. Atom. Data Nucl. Data Tables, 1970,7: 56515. Winick Herman. X-ray Data Booklet. Lawrence BerkeleyNational Laboratory University of California, Berkeley, CA94720, 200116. Kabir M Z, Kasap S O, ZHAO W et al. IEE Proc.-CircuitsDevices Syst., 2003, 150: 25817. Yin Shi, Tumer Tumay O, Maeding Dale et al. IEEE Trans-actions on Nuclear Science, 2002, 49(1): 17618. Kolosov S A, Klevkov Yu V, Plotnikov A F. Semiconductors, 2004, 38(4): 455

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GUI Jian-Bao, GUO Jin-Chuan, YANG Qin-Lao and NIU Han-Ben. Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors[J]. Chinese Physics C, 2007, 31(10): 933-937.
GUI Jian-Bao, GUO Jin-Chuan, YANG Qin-Lao and NIU Han-Ben. Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors[J]. Chinese Physics C, 2007, 31(10): 933-937. shu
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Received: 2006-12-05
Revised: 2007-03-09
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Use of Monte Carlo Method to Evaluate the Response of Direct Conversion X-Ray Detectors

    Corresponding author: GUI Jian-Bao,
  • Institute of Optoelectronics Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China2 Institute of Optoelectronics, Shenzhen University, Shenzhen 518060, China
  • Received Date: 2006-12-05
  • Accepted Date: 2007-03-09
  • Available Online: 2007-10-05

Abstract: The response of three semiconductor materials, polycrystalline HgI2, amorphous Se and polycrystalline CdTe, used for large area direct conversion detectors, is simulated by Monte Carlo method for X-ray photons in the diagnostic energy range (10—100keV). The simulation involves the transmission spectra, backscatting spectra, absorption efficiency and charge sensitivity. The interaction process between X-ray photons and the conversion materials is simulated by EGSnrc Monte Carlo code system and for the generation of signal charges Gaussian noise and the collection of partial charges are taken into account. The results show that deep traps in materials can affect largely detecting sensitivity when the mean free length (Schubweg) of carriers is less than the materials thickness. The sensitivity of HgI2 is 5 times higher than that of amorphous Se and CdTe is 10 times higher than amorphous Se, it can be seen that a high Z material can improve the detecting sensitivity greatly.

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