Production of EUV Power with SECRAL

ZHAO HUAN-Yu; ZHAO Hong-Wei; SUN Liang-Ting; ZHANG Xue-Zhen; SHENG Liu-Si; TIAN Yang-Chao; ZHANG Guo-Bin

Chinese Physics C> 2007, Vol. 31> Issue(S1) : 229-231

Production of EUV Power with SECRAL

Institute of Modern Physics, Lanzhou 730000, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China3 University of Sciences and Technology of China, Hefei 230026, China

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Abstract：
The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4$\uppi$ sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule.

References

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ZHAO HUAN-Yu, ZHAO Hong-Wei, SUN Liang-Ting, ZHANG Xue-Zhen, SHENG Liu-Si, TIAN Yang-Chao and ZHANG Guo-Bin. Production of EUV Power with SECRAL[J]. Chinese Physics C, 2007, 31(S1): 229-231.

ZHAO HUAN-Yu, ZHAO Hong-Wei, SUN Liang-Ting, ZHANG Xue-Zhen, SHENG Liu-Si, TIAN Yang-Chao and ZHANG Guo-Bin. Production of EUV Power with SECRAL[J]. Chinese Physics C, 2007, 31(S1): 229-231. shu

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Received: 2007-05-30
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Production of EUV Power with SECRAL

Corresponding author: ZHAO HUAN-Yu,

Institute of Modern Physics, Lanzhou 730000, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China3 University of Sciences and Technology of China, Hefei 230026, China

Received Date: 2007-05-30

Accepted Date: 1900-01-01

Available Online: 2007-01-03

Abstract: The high power EUV source is one of key issues in the development of EUV lithography which is considered to be the most promising technology among the next generation lithography. However neither DPP nor LPP seems to meet the requirements of the commercial high-volume product. Insufficiency of DPP and LPP motivate the investigation of other means to produce the EUV radiation required in lithography. ECR plasma seems to be one of the alternatives. In order to investigate the feasibility of ECR plasma as a EUV light source, the EUV power emitted by SECRAL was measured. A EUV power of 1.03W in 4$\uppi$ sr solid angle was obtained when 2000W 18GHz rf power was launched, and the corresponding CE was 0.5%. Considering that SECRAL is designed to produce very high charge state ions, this very preliminary result is inspiring. Room-temperature ECR plasma and Sn plasma are both in the planned schedule.

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Production of EUV Power with SECRAL

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