Surface morphology of He-implanted single-crystalline silicon

LI Bing-Sheng; ZHANG Chong-Hong; ZHOU Li-Hong; YANG Yi-Tao

Chinese Physics C> 2008, Vol. 32> Issue(S2) : 255-258

Surface morphology of He-implanted single-crystalline silicon

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Single-crystalline Si (100) samples were implanted with 30 keV He²⁺ ions to doses ranging from 2.0×10¹⁶ to 2.0×10¹⁷ions /cm² and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×10¹⁶ ions /cm² implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×10¹⁶ ions /cm² implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×10¹⁷ ions /cm². Exfoliations occurred on the sample surface to a dose of 2.0×10¹⁷ ions /cm². Mechanisms underlying the surface change were discussed.

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LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258.

LI Bing-Sheng, ZHANG Chong-Hong, ZHOU Li-Hong and YANG Yi-Tao. Surface morphology of He-implanted single-crystalline silicon[J]. Chinese Physics C, 2008, 32(S2): 255-258. shu

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Received: 2008-07-17
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Surface morphology of He-implanted single-crystalline silicon

Corresponding author: LI Bing-Sheng,

Received Date: 2008-07-17

Accepted Date: 1900-01-01

Available Online: 2008-01-03

Abstract: Single-crystalline Si (100) samples were implanted with 30 keV He²⁺ ions to doses ranging from 2.0×10¹⁶ to 2.0×10¹⁷ions /cm² and subsequently thermally annealed at 800℃ for 30min. The morphological change of the samples with the increase of implantation dose was investigated using atomic force microscopy (AFM). It was found that oblate-shaped blisters with an average height around 4.0nm were found on the 2.0×10¹⁶ ions /cm² implanted sample surface; spherical-shaped blisters with an average height around 10.0nm were found on the 5.0×10¹⁶ ions /cm² implanted sample surface; strip-shaped and conical cracks were observed on the sample He-implanted to a dose of 1.0×10¹⁷ ions /cm². Exfoliations occurred on the sample surface to a dose of 2.0×10¹⁷ ions /cm². Mechanisms underlying the surface change were discussed.

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Surface morphology of He-implanted single-crystalline silicon

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