Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber

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WU Ling-Hui, LIU Jian-Bei, QIN Zhong-Hua, CHEN Chang, ZHUANG Bao-An, CHEN Yuan-Bo, WANG Yi-Fang, JIN Yan, LIU Rong-Guang, MA Xiao-Yan, Ma Yuan-Yuan, TANG Xiao, Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber[J]. Chinese Physics C, 2006, 30(7): 665-669.
WU Ling-Hui, LIU Jian-Bei, QIN Zhong-Hua, CHEN Chang, ZHUANG Bao-An, CHEN Yuan-Bo, WANG Yi-Fang, JIN Yan, LIU Rong-Guang, MA Xiao-Yan, Ma Yuan-Yuan, TANG Xiao, Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber[J]. Chinese Physics C, 2006, 30(7): 665-669. shu
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Received: 2005-10-18
Revised: 2005-11-22
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Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber

    Corresponding author: WU Ling-Hui,
  • Institute of High Energy Physics, CAS, Beijing 100049, China2 Graduate University of Chinese Academy of Sciences, Beijing 100049, China

Abstract: There exists strong left-right asymmetry of the X-T relation in the boundary cell of the BESⅢ drift chamber. The simulation indicates that this kind of asymmetry can be reduced by applying compensation voltage on the boundary field layer, which is confirmed in a beam test for a prototype chamber. The impact of the compensation voltage of the boundary cell on the spacial resolution and the dE/dx measurement is reported in this paper.

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