Study of the Compensation Voltage on the Boundary Field Layer of the BES III Drift Chamber
- Received Date: 2005-10-18
- Accepted Date: 2005-11-22
- Available Online: 2006-07-05
Abstract: There exists strong left-right asymmetry of the X-T relation in the boundary cell of the BESⅢ drift chamber. The simulation indicates that this kind of asymmetry can be reduced by applying compensation voltage on the boundary field layer, which is confirmed in a beam test for a prototype chamber. The impact of the compensation voltage of the boundary cell on the spacial resolution and the dE/dx measurement is reported in this paper.