Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

JIANG Xiao-Ming; JIA Quan-Jie; HU Tian-Dou; HUANG Yu-Ying; ZHENG Wen-Li; HE Wei; XIAN Ding-Chang; SHI Bin; JIANG Zui-Min; WANG Xun

Chinese Physics C> 2001, Vol. 25> Issue(6) : 588-594

Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique

Institute of High Energy Physics, CAS, Beijing 100039,China1 Surface Physics National Key Lab., Fudan University, Shanghai 200433,China

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Abstract：
The X ray standing wave experiment method is established with the double-crystal monochromator and precision 2-circle goniometer at Beijing Synchrotron Radiation Facility. It is used combined with the X-ray diffraction, to investigate the heterostructure of super thin Ge atomic layer within Si crystals. The results show that the Ge_x Si_1－x alloy layer with average x=0.13 was formed in the Si crystal sample due to the segregation of Ge atoms during the preparation. Due to the diffusion of Ge atoms to the crystal surface, the Ge_x Si_1－x alloy layer was disappeared and nearly pure Ge layer was formed on the Si crystal surface after annealing at 650℃.

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JIANG Xiao-Ming, JIA Quan-Jie, HU Tian-Dou, HUANG Yu-Ying, ZHENG Wen-Li, HE Wei, XIAN Ding-Chang, SHI Bin, JIANG Zui-Min and WANG Xun. Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique[J]. Chinese Physics C, 2001, 25(6): 588-594.

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Received: 2000-05-26
Revised: 1900-01-01

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