Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

LUO Wen-Yun; WANG Chao-Zhuang; HE Xin-Fu; FAN Sheng; HUANG Xiao-Long; WANG Chuan-Shan

近期发现有不法分子冒充我刊与作者联系，借此进行欺诈等不法行为，请广大作者加以鉴别，如遇诈骗行为，请第一时间与我刊编辑部联系确认（《中国物理C》（英文）编辑部电话：010-88235947,010-88236950），并作报警处理。

本刊再次郑重声明：

（1）本刊官方网址为cpc.ihep.ac.cn和https://iopscience.iop.org/journal/1674-1137

（2）本刊采编系统作者中心是投稿的唯一路径，该系统为ScholarOne远程稿件采编系统，仅在本刊投稿网网址（https://mc03.manuscriptcentral.com/cpc）设有登录入口。本刊不接受其他方式的投稿，如打印稿投稿、E-mail信箱投稿等，若以此种方式接收投稿均为假冒。

（3）所有投稿均需经过严格的同行评议、编辑加工后方可发表，本刊不存在所谓的“编辑部内部征稿”。如果有人以“编辑部内部人员”名义帮助作者发稿，并收取发表费用，均为假冒。

《中国物理C》（英文）编辑部

2024年10月30日

Chinese Physics C> 2006, Vol. 30> Issue(11) : 1088-1090

Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800, China2 China Institute of Atomic Energy, Beijing 102413, China

Abstract
HTML
Reference
Related

PDF

Abstract：
The displacement damage effects due to Non-ionizing Energy Loss (NIEL) is one reason of device-malfunction in Space. The NIEL induced by proton with energies from 10MeV to 400MeV in Si and GaAs have been calculated using updated Monte-Carlo code SHIELD.

References

[1]

. CHEN Shi-Bin, ZHANG Yi-Men, CHEN Yu-Sheng et al.HEP NP, 2001, 25(4): 365-370(in Chinese)(陈世彬, 张义门, 陈雨生等. 高能物理与核物理, 2001, 25(4): 365—370)2. Akkerman A, Barak J, Chadwick M B et al. RadiationPhysics and Chemistry, 2001, 62: 301-3103. Summers G P, Burke E A, Shapiro P et al. IEEE Trans.Nucl. Sci., 1993, 40: 1372-13794. Jun I, Xapsos M A, Messenger S R et al. IEEE Trans. Nucl. Sci., 2003, 50: 1924-19285. Dementyev A V, Sobolevsky N M. Radiation Measurements, 1999, 30: 553-5576. Ziegler J F, Biresack J P, Littmark U. The Stopping andRange of Ions in Solids. New York: Pergamon Press, 19857. Jun I et al. IEEE Trans. Nucl. Sci., 2004, 51: 3207-3210

[1]	WANG Er-Dong , rg Kewisch , Ilan Ben-Zvi , Andrew Burrill , Trivini Rao , WU Qiong , Animesh Jain , Ramesh Gupta , Doug Holmes , ZHAO Kui . Heat load of a GaAs photocathode in an SRF electron gun. Chinese Physics C, 2011, 35(4): 387-391. doi: 10.1088/1674-1137/35/4/012
[2]	LIU Yun-Hong , WANG Rong , CUI Xin-Yu , SUN Xu-Fang . Displacement damage dose approach to analyze ion irradiation effects on homemade GaAs/Ge solar cells. Chinese Physics C, 2008, 32(S2): 243-246.
[3]	LAN Xiao-Gang , HOU Yan , ZHOU Xun-Xiu , JIA Huan-Yu , CAO Zhen , DING Lin-Kai . Study of p-Air Inelastic Cross Section with Directly Arrived Protons at Yangbajing. Chinese Physics C, 2007, 31(6): 513-517.
[4]	LIU Yu-Dong , GUO Zhi-Yuan , Qin Qing , WANG Jiu-Qing , ZHAO Zheng . Transverse Blowup along Bunch Train Caused by Electron Cloud in BEPC. Chinese Physics C, 2006, 30(3): 260-263.
[5]	Fan Ying , REN Zhong-Zhou . Theoretical Studies on Electron Scattering of S and Si Isotopes. Chinese Physics C, 2006, 30(10): 983-987.
[6]	LI Jia-Xing , LI Chen , GUO Zhong-Yan , XIAO Guo-Qing , ZHAN Wenlong , WANG Jian-Song , SUN Zhi-Yu , WANG Meng , CHEN Li-Xin , MAO Rui-Shi , HU Zheng-Guo . Measurement of Total Reaction Cross Section of the Proton Drip-line Nucleus 17Ne on Si Target. Chinese Physics C, 2005, 29(1): 28-31.
[7]	LIU Chang-Long . Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon. Chinese Physics C, 2004, 28(9): 1013-1016.
[8]	WU Xiao-Shan , TAN Wei-Shi , JIANG Shu-Sheng , WU Zhong-Hua , DING Yong-Fan , . Microstructures of Ge/Si Superlattices Growtn at Low Temperature. Chinese Physics C, 2003, 27(8): 739-743.
[9]	HE Qing , JIA Quan-Jie , JIANG Xiao-Ming , CUI Jian , JIANG Zui-Min . Study of Si Caplayer Influence on Microstructure of Ge/Si Quantum Dots by Grazing Incident X-Ray Diffraction. Chinese Physics C, 2003, 27(S1): 49-52.
[10]	ZHU Zhi-Yong , JIN Yun-Fan , LIU Chang-Long , SUN You-Mei , WANG Yan-Bin , HOU Ming-Dong , CHEN Xiao-Xi , WANG Zhi-Guang , ZHANG Chong-Hong , LIU Jie , LI Bao-Quan . Electronic Energy Loss Effects in Polystyrene Irradiated with High Energy Argon Ions. Chinese Physics C, 2001, 25(1): 74-78.
[11]	WANG SuFang , Cavallaro Sl , JIN GenMing , Grzeszczuk A , Zipper W . Binary Reaction and Fusion Reaction in ²⁸Si+¹²C. Chinese Physics C, 2000, 24(10): 933-939.
[12]	An Zhu . Microscopic Analysis of Proton Scattering from ²⁸Si at 22MeV. Chinese Physics C, 1995, 19(10): 873-878.
[13]	HAN Rong-Dian , WENG Hui-Min , ZHOU Xian-Yi , XU Ji-Hua , ZHU Jing-Sheng , LI Xiao-Guang , SHA Jian , WANG Jing-Cheng . Research for Crystallization of Metallic Glass Pd_79.5Ni₄Si_16.5 by Slow Positron Beam. Chinese Physics C, 1993, 17(4): 300-304.
[14]	Weng Huimin , Zhou Xianyi , Xu Jihua , Sun Shijun , Zhu Jingsheng , Wu Shulan , Han Rongdian . Microstructure of Al/GaAs Interface Studied by Slow Positron Beam. Chinese Physics C, 1993, 17(S2): 101-109.
[15]	WENG Hu-Min , ZHOU Xian-Yi , XU Ji-Hua , SUN Shi-Jun , ZHU Jing-Sheng , WU Shu-Lan , HAN Rong-Dian . Microstructure of A1/GaAs Interface Studied by Slow Positron Beam. Chinese Physics C, 1993, 17(9): 775-783.
[16]	LI Yang-Guo . The Spin Effect of Antiproton-Nucleus Inelastic Collison. Chinese Physics C, 1992, 16(2): 137-144.
[17]	DAI Guang-Xi , QI Yu-Jin , ZHENG Ji-Wen , LIU Xi-Ming , . FISSION MEASUREMENT ON 5.5 TO 21.7MeV/A ²⁸Si+¹⁹⁷Au SYSTEM (Ⅱ) ANGULAR DISTRIBUTION OF ICF AND SF. Chinese Physics C, 1990, 14(8): 739-744.
[18]	DAI Guang-Xi , QI Yu-Jin , ZHENG Ji-Wen , LIU Xi-Ming , , . INCOMPLETE AND SEQUENTIAL FISSION IN ²⁸Si+²³⁸U SYSTEMS. Chinese Physics C, 1990, 14(10): 912-918.
[19]	XIONG Xing-Min . A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION. Chinese Physics C, 1986, 10(4): 459-465.
[20]	SHEN Wen-Qing , YIN Shu-Zhi , GUO Zhong-Yan , ZHU Yong-Tai , CHEN Ju-Shen , WU En-Jiu , GUO Chi-Di , FENG En-Pu , XIE Yuan-Xiang . A MEASUREMENT OF THE ELASTIC SCATTERING FOR REACTION ¹²C+²⁸Si AT ENERGIES 56MeV—69MeV. Chinese Physics C, 1984, 8(5): 628-632.

Access

Get Citation

LUO Wen-Yun, WANG Chao-Zhuang, HE Xin-Fu, FAN Sheng, HUANG Xiao-Long and WANG Chuan-Shan. Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs[J]. Chinese Physics C, 2006, 30(11): 1088-1090.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2006-01-24
Revised: 2006-05-26

Article Metric

Article Views(3470)
PDF Downloads(653)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Non-ionizing Energy Loss of Middle Energy Proton in Si and GaAs

Corresponding author: HE Xin-Fu,

Shanghai Applied Radiation Institute, Shanghai University, Shanghai 201800, China2 China Institute of Atomic Energy, Beijing 102413, China

Received Date: 2006-01-24
Accepted Date: 2006-05-26
Available Online: 2006-11-05

Abstract: The displacement damage effects due to Non-ionizing Energy Loss (NIEL) is one reason of device-malfunction in Space. The NIEL induced by proton with energies from 10MeV to 400MeV in Si and GaAs have been calculated using updated Monte-Carlo code SHIELD.