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Abstract:
A method of experimental determination of the sensitive volume(Sv)thickness d of micro-electronic devices is presented. It is based upon the deconvolution of the functions of heavy ion upset cross sections versus the range of the incidentions σseu(r), measured by varying the ion energy, and LET(r). The measured σseu(LET) and d can be used for accurate prediction of the rate of Single Event Effects (SEE) in space.
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References
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[1]
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. McNulty P J, Abdel-Kader W G, Farrel G E. Radiat. Phys. Chem., 1994, 43: 139-1492.Barak J, Levinson J, Akkerman A et al. Proc. 3rd RADECS Conf., 1995, 431-4363.Roth D.R, McNulty P J, Abdel-Kader W G et al. IEEE Trans. Nucl. Sci., 1993, 40: 17214.Beauvais J, McNulty P J, Abdel-Kader W G et al. Proc. 2rd RADECS Conf., 1993, 5405.Zoutendyk J A, Smith L S, Soli G A. et al. IEEE Trans. Nucl. Sci., 1985, 32: 4164-4169; McNulty P J, Beauvais W J, Roth D R. IEEE Trans. Nucl. Sci., 1991, 38: 14636.Barak J, Levinson J, Akkerman A et al. Proc. 3rd RADECS Conf., 1995, 321-3257.EcoRet R, Duzellier S, Barak J et al. Proc. 4rd RADECS Conf., 1997, 5768.EcoRet R, Duzellier S. IEEE Trans. Nucl. Sci. 1997,44(6): 2378-23859.Inguimbert C et al. IEEE Trans. Nucl. Sci., 2000, 47(3):551-55810.LU Xiu-Qin et al. NUCL. TECH., 2003, 26(4): 271-274(in Chinses)(路秀琴等,核技术,2003,26(4):271-274
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