Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits

YANG Yi-Ming; ZHU Zhan-Ping; ZENG Ji-Lai; QIAN Bao-Liang

Chinese Physics C> 2008, Vol. 32> Issue(S1) : 184-186

Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits

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Abstract：
A simple theoretical model based on plasma physics is presented to analyze the microwave plasma effects on the electronic circuits. Results show that under certain parameter conditions the threshold for damaging the electronic circuits decreases with the decrease of the frequency of the high-power microwave. In addition, the oscillation amplitudes of the plasma electrons increase dramatically when the plasma frequency is near the high-power microwave frequency, which can easily damage the electronic circuits.

References

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YANG Yi-Ming, ZHU Zhan-Ping, ZENG Ji-Lai and QIAN Bao-Liang. Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits[J]. Chinese Physics C, 2008, 32(S1): 184-186.

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Received: 2008-01-10
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits

Corresponding author: YANG Yi-Ming,

Received Date: 2008-01-10
Accepted Date: 1900-01-01
Available Online: 2008-01-04

Abstract: A simple theoretical model based on plasma physics is presented to analyze the microwave plasma effects on the electronic circuits. Results show that under certain parameter conditions the threshold for damaging the electronic circuits decreases with the decrease of the frequency of the high-power microwave. In addition, the oscillation amplitudes of the plasma electrons increase dramatically when the plasma frequency is near the high-power microwave frequency, which can easily damage the electronic circuits.