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Chinese Physics C> 2002, Vol. 26> Issue(9) : 904-908 

Single Event Effects Induced by 15.14 MeV/u 136Xe Ions

  •  Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China2 Institute of Aerospace Computer Technology, China Aerospace Science and Technology Corporation, Shanghai 200050, China

  • Single event effects induced by 15.14MeV/u 136Xe ions in different batches of 32k×8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latchup are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of "dead" layer above the sensitive volume are estimated.
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    [1] Koga R. IEEE Trans. Nucl. Sci.，1996, NS43(2):6612 Duzellier S, Ecoffet R. IEEE Trans. Nucl. Sci.，1996, NS43(2):6713 LIU Jie, MA Feng, HOU Ming-Dong et al. Nucl. Instr. Meth.，1998, B135:2394 LIU Jie, HOU Ming-Dong, LI Bao-Quan et al. Nucl. Instr. Meth.，2000, B164/165:9735 LIU Jie. A Ground-based Simulation Rescarch on Single Event Effects in Semiconductor Devices used in Space. Institute of Modem Physics, The Chinese Academy of Sciences, Ph. D. Thesis 1999 (in Chinese)(刘杰宇航半导体器件单粒子效应地面模拟研究.中国科学院近代物理研究所博士论文.1999)6 McNulty P J, Roche Ph, Palau J M et al. IEEE Trans. Nucl. Sci.，1999, NS46:13707 Ecoffet R, Duzellier S. IEEE Trans. Nucl. Sci.，1997, NS44:2378

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HOU Ming-Dong, ZHANG Qing-Xiang, LIU Jie, WANG Zhi-Guang, JIN Yun-Fan, ZHU Zhi-Yong, ZHEN Hong-Lou, LIU Chang-Long, CHEN Xiao-Xi, WEI Xin-Guo, ZHANG Lin, FAN You-Cheng, Single Event Effects Induced by 15.14 MeV/u 136Xe Ions[J]. Chinese Physics C, 2002, 26(9): 904-908.
HOU Ming-Dong, ZHANG Qing-Xiang, LIU Jie, WANG Zhi-Guang, JIN Yun-Fan, ZHU Zhi-Yong, ZHEN Hong-Lou, LIU Chang-Long, CHEN Xiao-Xi, WEI Xin-Guo, ZHANG Lin, FAN You-Cheng, Single Event Effects Induced by 15.14 MeV/u 136Xe Ions[J]. Chinese Physics C, 2002, 26(9): 904-908. shu
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Received: 2001-10-09
Revised: 1900-01-01
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Single Event Effects Induced by 15.14 MeV/u 136Xe Ions

    Corresponding author: HOU Ming-Dong,
  • Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China2 Institute of Aerospace Computer Technology, China Aerospace Science and Technology Corporation, Shanghai 200050, China
  • Received Date: 2001-10-09
  • Accepted Date: 1900-01-01
  • Available Online: 2002-09-05

Abstract: Single event effects induced by 15.14MeV/u 136Xe ions in different batches of 32k×8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latchup are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of "dead" layer above the sensitive volume are estimated.

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