Microstructure of A1/GaAs Interface Studied by Slow Positron Beam

WENG Hu-Min; ZHOU Xian-Yi; XU Ji-Hua; SUN Shi-Jun; ZHU Jing-Sheng; WU Shu-Lan; HAN Rong-Dian

Chinese Physics C> 1993, Vol. 17> Issue(9) : 775-783

Microstructure of A1/GaAs Interface Studied by Slow Positron Beam

Department of Modern Physics,University of Science and Technology of China,Hefei 2300262 Structure Research Laboratory,University of Science and Technology of China,Academia Sinica Hefei 2300263 International Center for Materials Physics,Academia Sinica Shenyang 110015

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Abstract：
A series of interface models were founded,and the expressions of relation between Doppler Broadening S-parameter and implanted energy of positrons were obtained from the diffusion equation of positrons.Interfaces formed between Al and (110) surfaces of GaAs were studied with Slow Positron Beam.The system of A1/GaAs interfaces could be illustrated by perfectly absorbing linear interface model.From the results fitted by the model,the relation between the S-parameter of interfaces and the annealing temperatures or the thickness of films was derivtd and the microstructure of interfaces and its dynamical characters discussed.

References

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Peter J. Schultz, K. G. Lynn, Rev. Mod. Phys，60(1988),701.[2]K. G. Lynn,"Interface Studies Using Variable Energy Positron Beam",Brookheren National Lab. , Preprint.[3]Huimin Weng, Xuezhe Guo, Rongdian Han, Xingjun Shi, Jingaheng Zhu, Texiu Zhao, Xiaping Wang, Nuclear Instr. Meth. Phys.Res.,A307(1991),577.[4]Jong-Lam Lee, Long Wei, Shoichiro Tanigawa, Haruhiro Oigawa, Yasuo Nannichi, Appl. Phys. Lett.，58(1991),1167[5]W. E. Spicer, Z. Liliental-Weber, E. Weber,N. Newman, J. Vac. Sci. Technol':，B6(1988);1245.[6]A. K. Srivastava, B. M. Arora; Solid-State Electronics,24(1981),1049.[7]李振环，《元素数据手册》，河北人民出版社1985年.

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WENG Hu-Min, ZHOU Xian-Yi, XU Ji-Hua, SUN Shi-Jun, ZHU Jing-Sheng, WU Shu-Lan and HAN Rong-Dian. Microstructure of A1/GaAs Interface Studied by Slow Positron Beam[J]. Chinese Physics C, 1993, 17(9): 775-783.

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Received: 1900-01-01
Revised: 1900-01-01

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Microstructure of A1/GaAs Interface Studied by Slow Positron Beam

Corresponding author: WENG Hu-Min,

Department of Modern Physics,University of Science and Technology of China,Hefei 2300262 Structure Research Laboratory,University of Science and Technology of China,Academia Sinica Hefei 2300263 International Center for Materials Physics,Academia Sinica Shenyang 110015

Received Date: 1900-01-01

Accepted Date: 1900-01-01

Available Online: 1993-09-05

Abstract: A series of interface models were founded,and the expressions of relation between Doppler Broadening S-parameter and implanted energy of positrons were obtained from the diffusion equation of positrons.Interfaces formed between Al and (110) surfaces of GaAs were studied with Slow Positron Beam.The system of A1/GaAs interfaces could be illustrated by perfectly absorbing linear interface model.From the results fitted by the model,the relation between the S-parameter of interfaces and the annealing temperatures or the thickness of films was derivtd and the microstructure of interfaces and its dynamical characters discussed.

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Microstructure of A1/GaAs Interface Studied by Slow Positron Beam

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