Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

LUO Yin-Hong; GONG Jian-Cheng; ZHANG Feng-Qi; GUO Hong-Xia; YAO Zhi-Bin; LI Yong-Hong; GUO Ning

Chinese Physics C> 2006, Vol. 30> Issue(1) : 79-83

Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment

Northwestern Institute of Nuclear Technology,Xi'an 710024,China

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Abstract：
The two in-circuit test systems, one is a HP4156 semiconductor parameter automation system for measuring steady total dose effect, another one is a system for measuring pulsed total dose effect, under different environment with working principle and technical specification are introduced in detail in the paper. The comparison study of total dose damage effects irradiated by Pulsed hard X ray and long pulsed γ-ray generated in Qiangguang-Ⅰaccelerator, and by ⁶⁰Co steady γ-ray on typical CMOS devices utilizing the two test systems has been performed, which lays a foundation for the further research of total dose effect on CMOS devices in the future.

References

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. Oldham T R, Mclean F B. IEEE Trans. Nucl. Sci., 2003,50(3): 4832. MA T P, Dressendorfer P V. Ionizing Radiation E ects in MOS Devices and Circuits. New York, Wiley, 1989. 2923. Peyre D, Poirot P, Galliaid R. IEEE Trans. Nucl. Sci.,1992,50(6): 103-1074. Rattner S, Boesch H E. IEEE Trans. Nucl. Sci., 1986,33(3): 1051-10525. LAI Z W. Radiation Hardening Electronics-Radiation Effects and Hardening Technique. Beijing: National Defence Industry Press, 1998. 298-300(赖祖武等.抗辐射电f学-辐射效应及加固原理.北京:国防工业出版社,1998. 298-300)

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LUO Yin-Hong, GONG Jian-Cheng, ZHANG Feng-Qi, GUO Hong-Xia, YAO Zhi-Bin, LI Yong-Hong and GUO Ning. Total Dose Test Technology and Damage Difference Study on CMOS Devices Under Different Irradiation Environment[J]. Chinese Physics C, 2006, 30(1): 79-83.

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Received: 2005-04-09
Revised: 2005-05-27

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