A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min

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2024年10月30日

Chinese Physics C> 1986, Vol. 10> Issue(4) : 459-465

A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min ^,

Institute of High Energy Physics, Academia Sinica, Beijing

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Abstract：
The defects in GaAs grown with the melt growth method at 1238℃ and with the Te-doped LPE method in the temperature range 750—950℃ are studied by positron annihilation. The lifetime component τ₂ exhibits a constant value of 312±11ps in the temperature range 800—1238℃. The intensity I₂ increases with the growth temperature. In the Te-doped LPE crystals, the concentration of the positron trap increases linearly with temperature. The trap is considered as Ga vacancy. The results show that doped Te in GaAs induces Ga vacancy.

References

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J. Cheng, J. P. Karins, J. W. Corbett、and L, C. Kimerling, J. Appl. Phys., 50(4)(1979), 2962.[2] O. Takai, Phys. Lett., 76A (1980) , 157.[3] S. Dannefaer, J. Phys., 15 (1982), 599.[4] D. P. Kerr, S. Knpka and B. G. Hogg, Phys. Lett., 88A(1982), 429.[5] P. S. Dobson,P. 'F. Fewster, D.T. J. Hurle, P.W. Hutchinson J. P. Mullin, B. W. Stranghan and A. F. W.Willougbby, Inst.Sytpo: on GaAs and Related Conf. (1978 );Ser., No.45. (1979), 163.[6] 熊兴民, 核技术, 5(1983),11.[7] D. C. Connors, R N.West, Phys Lett., A30 (1969), 24; B. Bergersen, M. J. Stott, Sol Comm., 7(1969), 1203.[8] W. Brands, Phys. Rev., B 3 (1971), 3432.[9] R. G. Fuller, Point Defects in Solids, Vol. 1, ed. by J. H, Grawford Jr., L. M. Slifkin (Plenum Press, New York, London, 1972), Chap. 2.[10] D. V. Lang, R. A, Logan and L. C. Kimerling, Phys. Lett., B15(1977), 4874.

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XIONG Xing-Min. A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION[J]. Chinese Physics C, 1986, 10(4): 459-465.

XIONG Xing-Min. A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION[J]. Chinese Physics C, 1986, 10(4): 459-465. shu

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Received: 1900-01-01
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min ^,

Corresponding author: XIONG Xing-Min,

Institute of High Energy Physics, Academia Sinica, Beijing

Received Date: 1900-01-01
Accepted Date: 1900-01-01
Available Online: 1986-08-05

Abstract: The defects in GaAs grown with the melt growth method at 1238℃ and with the Te-doped LPE method in the temperature range 750—950℃ are studied by positron annihilation. The lifetime component τ₂ exhibits a constant value of 312±11ps in the temperature range 800—1238℃. The intensity I₂ increases with the growth temperature. In the Te-doped LPE crystals, the concentration of the positron trap increases linearly with temperature. The trap is considered as Ga vacancy. The results show that doped Te in GaAs induces Ga vacancy.