A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min

Chinese Physics C> 1986, Vol. 10> Issue(4) : 459-465

A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION

XIONG Xing-Min ^,

Institute of High Energy Physics, Academia Sinica, Beijing

Abstract
HTML
Reference
Related

PDF

Abstract：
The defects in GaAs grown with the melt growth method at 1238℃ and with the Te-doped LPE method in the temperature range 750—950℃ are studied by positron annihilation. The lifetime component τ₂ exhibits a constant value of 312±11ps in the temperature range 800—1238℃. The intensity I₂ increases with the growth temperature. In the Te-doped LPE crystals, the concentration of the positron trap increases linearly with temperature. The trap is considered as Ga vacancy. The results show that doped Te in GaAs induces Ga vacancy.

References

[1]

J. Cheng, J. P. Karins, J. W. Corbett、and L, C. Kimerling, J. Appl. Phys., 50(4)(1979), 2962.[2] O. Takai, Phys. Lett., 76A (1980) , 157.[3] S. Dannefaer, J. Phys., 15 (1982), 599.[4] D. P. Kerr, S. Knpka and B. G. Hogg, Phys. Lett., 88A(1982), 429.[5] P. S. Dobson,P. 'F. Fewster, D.T. J. Hurle, P.W. Hutchinson J. P. Mullin, B. W. Stranghan and A. F. W.Willougbby, Inst.Sytpo: on GaAs and Related Conf. (1978 );Ser., No.45. (1979), 163.[6] 熊兴民, 核技术, 5(1983),11.[7] D. C. Connors, R N.West, Phys Lett., A30 (1969), 24; B. Bergersen, M. J. Stott, Sol Comm., 7(1969), 1203.[8] W. Brands, Phys. Rev., B 3 (1971), 3432.[9] R. G. Fuller, Point Defects in Solids, Vol. 1, ed. by J. H, Grawford Jr., L. M. Slifkin (Plenum Press, New York, London, 1972), Chap. 2.[10] D. V. Lang, R. A, Logan and L. C. Kimerling, Phys. Lett., B15(1977), 4874.

Access

Get Citation

XIONG Xing-Min. A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION[J]. Chinese Physics C, 1986, 10(4): 459-465.

XIONG Xing-Min. A STUDY OF DEFECTS DEFECTS IN GaAs BY POSITRON ANNIHILATION[J]. Chinese Physics C, 1986, 10(4): 459-465. shu

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 1900-01-01
Revised: 1900-01-01

Article Metric

Article Views(2621)
PDF Downloads(446)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142