Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

LIU Chang-Long

Chinese Physics C> 2004, Vol. 28> Issue(9) : 1013-1016

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

LIU Chang-Long ^,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France3 IMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

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Abstract：
Crystalline silicon samples were first implanted at room temperature with 160keV He ions at a dose of 5×10¹⁶ions/cm².Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10¹⁵ions/cm ²,or were co-treated with high density hydrogen plasma.Cross-sectional transmission electronic microscopy(XTEM)was used to study the growth of cavities after the subsequent annealing at 800℃ for 1 hour.Our results clearly show that both the Si implant and plasma hydrogenation can influence the growth of cavities in Si.In Si ion co-implanted sample,the cavities were found to shrink due to the presentation of excess of interstitial-like defects.However,additional plasma hydrogenation leads to enhancement in cavity growth.The results were qualitatively discussed.

References

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LIU Chang-Long. Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon[J]. Chinese Physics C, 2004, 28(9): 1013-1016.

LIU Chang-Long. Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon[J]. Chinese Physics C, 2004, 28(9): 1013-1016. shu

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Received: 2003-11-27
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Effects of Si Ion Implantation and H Plasma Treatment on the Growth of Cavities in Silicon

LIU Chang-Long ^,

Corresponding author: LIU Chang-Long,

Department of Physics,School of Science,Tianjin University,Tianjin 300072,China2 CERI/CNRS,3A rue de la Férollerie,45071 Orléans Cedex 2,France3 IMP/STMicroelectronics,16 rue Pierre et Marie Curie,B.P.7155,F37071 Tours Cedex,France

Received Date: 2003-11-27
Accepted Date: 1900-01-01
Available Online: 2004-09-05

Abstract: Crystalline silicon samples were first implanted at room temperature with 160keV He ions at a dose of 5×10¹⁶ions/cm².Some of these samples were then co-implanted with 80 keV Si ions to a dose of 5×10¹⁵ions/cm ²,or were co-treated with high density hydrogen plasma.Cross-sectional transmission electronic microscopy(XTEM)was used to study the growth of cavities after the subsequent annealing at 800℃ for 1 hour.Our results clearly show that both the Si implant and plasma hydrogenation can influence the growth of cavities in Si.In Si ion co-implanted sample,the cavities were found to shrink due to the presentation of excess of interstitial-like defects.However,additional plasma hydrogenation leads to enhancement in cavity growth.The results were qualitatively discussed.