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Chinese Physics C> 2008, Vol. 32> Issue(S2) : 247-250 

Slow highly charged ion O4+ induced electron emission from clean solid surfaces

  • The total electron emission yields following the interaction of slow highly charged ions (SHCI) O4+ with different material surfaces (W, Au, Si and SiO2) have been measured. It is found that the electron emission yield γ increases proportionally with the projectile velocity v ranging from 5.36×105m/s to 10.7× 105m/s. The total emission yield is dependent on the target materials, and it turns out to follow the relationship γ(Au)>γ(Si)>γ(W). The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant, which is in good agreement with the former studies.
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    [1] . Aumayr F, Winter H P. Surf. Sci. Nanotech., 2003, 1: 1712. Takahashi S, Tona M. Nucl. Instrum. Methods B, 2005,235: 4563. Baragiola R A, Dukes C A. Phys. Rev. Lett., 1996, 76:25474. Schenkel T, Hamza A V, Barnes A V et al. Progr. Surf.Sci., 1999, 61: 235. Minniti M, Commisso M, Sindona A et al. Phys. Rev. B,2007, 75: 0454246. WANG Yu-Yu, ZHAO Yong-Tao, XIAO Guo-Qing et al.Acta Phys. Sin., 2006, 55: 673 (in Chinese)7. McDonald J W, Schenkel T, Hamza A V et al. Nucl. In-strum. Methdos B, 2005, 240: 8298. Aumayr F, Winter H P. Nucl. Instrum. Methdos B, 2005,233: 1119. Ritzau S M, Baragiola R A. Phys. Rev. B, 1998, 58: 252910. Baragiola R A, Alonso E V, Oliva-Florio A et al. Phys.Rev. B,1979, 19: 12111. Stckl J, Suta T, Ditroi F et al. Phys. Rev. Lett., 2004, 93:26320112. Sternglass E J. Phys. Rev., 1957, 108: 113. Schou J. Phys. Rev. B, 1980, 22: 214114. Clouvas A, Rothard H, Burhard M et al. Phys. Rev. B,1989, 39: 631615. Rothard H, Kroneberger K, Clouvas A et al. Phys. Rev. A,1990, 41: 252116. Rothard H, Kroneberger K, Veje E et al. Phys. Rev. B,1990, 41: 395917. WANG Yu-Yu, ZHAO Yong-Tao, Qayyum A et al. in press,doi:10.1016/j.nimb.2007.09.04718. XIAO Guo-Qing, ZHAO Yong-Tao, ZHANG Xiao-An etal. 16th International Workshop on Inelastic Ion-SurfaceCollisions(IISC-16), Austria, 2006. 13819. Allegrini F, Wimmer-Schweingruber R F, Wurz P et al.Nucl. Instrum. Methods B, 2003, 211: 487

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XU Zhong-Feng, ZHAO Yong-Tao, WANG Yu-Yu, ZHAO Di, WANG Jian-Guo, LI De-Hui, Qayyum Abdul, LI Fu-Li and XIAO Guo-Qing. Slow highly charged ion O4+ induced electron emission from clean solid surfaces[J]. Chinese Physics C, 2008, 32(S2): 247-250.
XU Zhong-Feng, ZHAO Yong-Tao, WANG Yu-Yu, ZHAO Di, WANG Jian-Guo, LI De-Hui, Qayyum Abdul, LI Fu-Li and XIAO Guo-Qing. Slow highly charged ion O4+ induced electron emission from clean solid surfaces[J]. Chinese Physics C, 2008, 32(S2): 247-250. shu
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Received: 2008-07-17
Revised: 1900-01-01
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Slow highly charged ion O4+ induced electron emission from clean solid surfaces

    Corresponding author: XU Zhong-Feng,
  • Received Date: 2008-07-17
  • Accepted Date: 1900-01-01
  • Available Online: 2008-01-03

Abstract: The total electron emission yields following the interaction of slow highly charged ions (SHCI) O4+ with different material surfaces (W, Au, Si and SiO2) have been measured. It is found that the electron emission yield γ increases proportionally with the projectile velocity v ranging from 5.36×105m/s to 10.7× 105m/s. The total emission yield is dependent on the target materials, and it turns out to follow the relationship γ(Au)>γ(Si)>γ(W). The result shows that the electron emission yields are mainly determined by the electron stopping power of the target when the projectile potential energy is taken as a constant, which is in good agreement with the former studies.

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