Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy

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SONG Yin, JIN Yun-Fan, WANG Zhi-Guang, ZHANG Chong-Hong, ZHAO Zhi-Ming and DUAN Jing-Lai. Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy[J]. Chinese Physics C, 2004, 28(6): 626-628.
SONG Yin, JIN Yun-Fan, WANG Zhi-Guang, ZHANG Chong-Hong, ZHAO Zhi-Ming and DUAN Jing-Lai. Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy[J]. Chinese Physics C, 2004, 28(6): 626-628. shu
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Received: 2003-11-11
Revised: 1900-01-01
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Study of N+ Implanted SiC Thin Films by FTIR and PL Spectroscopy

    Corresponding author: SONG Yin,
  • Institute of Modern Physics,The Chinese Academy of Sciences,Lanzhou 730000,China

Abstract: SiC films were deposited on Si substrates by RF co-sputtering of the Si and C compound target and implanted by 120keV N ions. The structure, optical property of thin films were studied by Fourier transform infrared spectrum(FTIR) and photoluminescence(PL) spectroscopy. The obtained results suggested that carbon nitride single, double and triple bonds are formed in the N ions implanted SiC films, and the luminescence intensity depends strongly on the quantity of N ions.

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