Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon

CHEN Shi-Bin; ZHANG Yi-Men; CHEN Yu-Sheng; HUANG Liu-Xing; ZHANG Yu-Ming

Chinese Physics C> 2001, Vol. 25> Issue(4) : 365-370

Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon

Microelectronics Institute, Xidian University, Xi'an 710071, China2 Northwest Institute of Nuclear Technology, Xi'an 710024, China

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Abstract：
Based on existing cross-section data and general theories, a Monte Carlo computer program named NEUTRON for calculating non-ionizing energy loss (NIEL) and ionizing energy loss (IEL) of neutrons in materials was written. The amount of IEL & NIEL and their distributions irradiation induced by 1MeV neutrons and protons in common semiconductor material Si were calculated with NEUTRON and introduced TRIM95, respectively. These results were analyzed and compared with literatures.

References

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CHEN Shi-Bin, ZHANG Yi-Men, CHEN Yu-Sheng, HUANG Liu-Xing and ZHANG Yu-Ming. Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon[J]. Chinese Physics C, 2001, 25(4): 365-370.

CHEN Shi-Bin, ZHANG Yi-Men, CHEN Yu-Sheng, HUANG Liu-Xing and ZHANG Yu-Ming. Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon[J]. Chinese Physics C, 2001, 25(4): 365-370. shu

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Received: 2000-03-16
Revised: 1900-01-01

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