Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

SONG Yin; ZHANG Cong-Hong; WANG Zhi-Guang; ZHAO Zhi-Ming; DUAN Jin-Lai; YAO Cun-Feng

Chinese Physics C> 2005, Vol. 29> Issue(11) : 1112-1114

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Institute of Modern Physics,CAS,Lanzhou 730000,China

Abstract
HTML
Reference
Related

PDF

Abstract：
In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.

References

[1]	. Gourary B S, Adrian F J. Solid State Phys., 1960, 10: 1272. La S Y, Bartram R H, Cox R T. J. Phys. Chem. Solids.,1973, 34: 10793. Bruce D. Evans. Journal of Nuclear Materials, 1995, 219:202—223

[1]	Xin Wu , Qi Chen , Ye Xing , Zhi-Peng Xing , Ruilin Zhu . SU(3) flavor symmetry analysis of hyperon non-leptonic two body decays. Chinese Physics C, 2025, 49(12): 123101. doi: 10.1088/1674-1137/adf1f1
[2]	ZHANG Cong , HE Yuan , ZHAO Hong-Wei , ZHANG Sheng-Hu . Multipacting simulation and analysis of a taper quarter wave cavity by using Analyst-PT3P. Chinese Physics C, 2012, 36(4): 362-366. doi: 10.1088/1674-1137/36/4/012
[3]	GUO Yun-Jun , HE Kang-Lin . Muon Identification Using the Efficiencies Ratio Method at BESⅡ. Chinese Physics C, 2007, 31(11): 1050-1055.
[4]	HUANG Wen-Xue , WANG Yue , ZHU Zhi-Chao , TIAN Yu-Lin , XU Hu-Shan , SUN Zhi-Yu , XIAO Guo-Qing , ZHAN Wen-Long . Experimental Study of the High-Voltage Breakdown and Simulations for the RFQ Cooler and Buncher RFQ1L. Chinese Physics C, 2006, 30(S2): 261-264.
[5]	LIU Chang-Long , LU Yi-Ying , YIN LI . Effects of Additional Vacancy-Like Defects Produced by Ion Impealations on Boron Thermal Diffusion in Silicon. Chinese Physics C, 2005, 29(11): 1107-1111.
[6]	HU Xi-Duo , SHAO Ming-Zhu , LUO Shi-Yu , LIU Yong-Sheng , ZHU De-Hai . Average Field Idea and Single Particle Model for 2 Dimension Crystallization Beams(Ⅱ). Chinese Physics C, 2004, 28(2): 196-199.
[7]	LI Ming-Liang , ZHU Sheng-Jiang , CHE Xing-Lai , YU Ying-Nan . Research on Two-Quasiparticle Bands in ⁹⁸Sr. Chinese Physics C, 2004, 28(S1): 75-77.
[8]	Medina Ablikim , HUANG Wei-Cheng , . New Realization of N=2 Supersymmetric QuantumMechanics and Shape Invariance. Chinese Physics C, 2002, 26(4): 338-345.
[9]	Yang Jianjun , Ma Boqiang , Li Guanglie . Non-perturbative Quark Propagator and the Study of the Non-trivial Q² Dependence in the Nucleon Structure Functions. Chinese Physics C, 1997, 21(2): 146-156.
[10]	BES Collaboration . Experimental Study of Resonance f₂(1270) in the J/ψ Hadronic Decay. Chinese Physics C, 1993, 17(2): 97-106.
[11]	Sa Ben-hao , Zhang Xi-zhen , Li Zhu-xia , Shi Yi-jin . A PRIMARY RESEARCH OF THE PHONON RENORMALIZATION OF NUCLEAR FIELD THEORY. Chinese Physics C, 1980, 4(3): 398-400.

Access

Get Citation

SONG Yin, ZHANG Cong-Hong, WANG Zhi-Guang, ZHAO Zhi-Ming, DUAN Jin-Lai and YAO Cun-Feng. Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation[J]. Chinese Physics C, 2005, 29(11): 1112-1114.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2005-01-24
Revised: 1900-01-01

Article Metric

Article Views(3474)
PDF Downloads(862)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

Corresponding author: SONG Yin,

Institute of Modern Physics,CAS,Lanzhou 730000,China

Received Date: 2005-01-24
Accepted Date: 1900-01-01
Available Online: 2005-11-05

Abstract: In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.