Turbostractic Boron Nitride Produced by Ion Bombardment

WANG ZhenXia; WANG WenMin; RUAN MeiLing; XU XunJiang

Chinese Physics C> 2000, Vol. 24> Issue(11) : 1055-1059

Turbostractic Boron Nitride Produced by Ion Bombardment

Shanghai Institute of Nuclear Research, The Chinese Academy of Sciences, Shanghai 201800, China2 State Key Laboratory for High Peerformance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, The Chinese Academy of Sciences, Shanghai 200050, China

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Abstract：
Fine structures appearing in boron nitride(BN) sample bomparded by N₂⁺ ion (60keV) were examined by JEM-200cx high-resolution transmission electron microscopy (HRTEM) at 200kV accelerating voltage. In the curved region of plate-like h-BN crystal sp² sheets (spacing 0.33nm), it was observed that the t-BN structure with an average interplaner spacing of 0.35 nm was formed. Although the mechanism of formation of the t-BN structure is nuclear, it appears that our discussion based on the viewpoint of beam-solid interaction may be critical in understanding the growth process of the t-BN structures.

References

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WANG ZhenXia, WANG WenMin, RUAN MeiLing and XU XunJiang. Turbostractic Boron Nitride Produced by Ion Bombardment[J]. Chinese Physics C, 2000, 24(11): 1055-1059.

WANG ZhenXia, WANG WenMin, RUAN MeiLing and XU XunJiang. Turbostractic Boron Nitride Produced by Ion Bombardment[J]. Chinese Physics C, 2000, 24(11): 1055-1059. shu

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Received: 1999-12-02
Revised: 1900-01-01

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Turbostractic Boron Nitride Produced by Ion Bombardment

Corresponding author: WANG ZhenXia,

Shanghai Institute of Nuclear Research, The Chinese Academy of Sciences, Shanghai 201800, China2 State Key Laboratory for High Peerformance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, The Chinese Academy of Sciences, Shanghai 200050, China

Received Date: 1999-12-02
Accepted Date: 1900-01-01
Available Online: 2000-11-05

Abstract: Fine structures appearing in boron nitride(BN) sample bomparded by N₂⁺ ion (60keV) were examined by JEM-200cx high-resolution transmission electron microscopy (HRTEM) at 200kV accelerating voltage. In the curved region of plate-like h-BN crystal sp² sheets (spacing 0.33nm), it was observed that the t-BN structure with an average interplaner spacing of 0.35 nm was formed. Although the mechanism of formation of the t-BN structure is nuclear, it appears that our discussion based on the viewpoint of beam-solid interaction may be critical in understanding the growth process of the t-BN structures.