Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Mo-Han Liu; Wu Lu; Wu-Ying Ma; Xin Wang; Qi Guo; Cheng-Fa He; Ke Jiang; Xiao-Long Li; Ming-Zhu Xun

doi:10.1088/1674-1137/40/3/036003

Chinese Physics C> 2016, Vol. 40> Issue(3) : 036003 DOI: 10.1088/1674-1137/40/3/036003

Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Mo-Han Liu ^1,2,, ,
Wu Lu ^1,2,, ,
Wu-Ying Ma ¹ ,
Xin Wang ¹ ,
Qi Guo ¹ ,
Cheng-Fa He ¹ ,
Ke Jiang ¹ ,
Xiao-Long Li ¹ ,
Ming-Zhu Xun ^1,2

1.
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2.
School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
3.
Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

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Abstract：
The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.
- SiGe HBTs ,
- TID ,
- ELDRS ,
- annealing

References

[1]	J. D. Cressler,IEEE Trans. Nucl. Sci., 60: 1992-2014 (2014)
[2]	J. D. Cressler, IEEE Trans. Microw. Theory. Tech., 46: 572-589 (1998)
[3]	J. A. Babcock, J. D. Cressler, L. S. Vempati et al, IEEE Trans. Nucl. Sci., 42: 1558-1566 (1994)
[4]	S. Zhang, G. Niu, J. D. Cressler et al, IEEE Trans. Nucl. Sci., 47: 2521-2527 (2000)
[5]	J. D. Cressler, R. Krithivasan, A. K. Sutton et al, IEEE Trans. Nucl. Sci., 50: 1805-1810 (2003)
[6]	B. M. Haugeruda, M. M. Pratapgarhwalaa, J. P. Comeaua et al, Solid-State Electronics, 50: 181-190 (2006)
[7]	K. C. Praveen, N. Pushpa, J. D. Cressler et al, J. Nano-Electron. Phys., 3: 348-357 (2011)
[8]	W. Lu, X. F. Yu, D. Y. Ren et al, Nuclear Techniques, 28: 925-928 (2005) (in Chinese)
[9]	D. M. Schmidt, A. Wu, R. D. Schrimpf et al, IEEE Trans. Nucl. Sci., 43: 3032-3039 (1996)
[10]	J. Boch, F. Saigne, A. D. Touboul et al, Appl. Phys. Lett., 88: 232113 (2006)
[11]	S. C. Witczak, R. D. Schrimpf, D. M. Fleetwood et al, IEEE Trans. Nucl. Sci., 44: 1989-2000 (1997)
[12]	L. Tsetseris, R. D. Schrimpf, D. M. Fleetwood et al, IEEE Trans. Nucl. Sci., 52: 2265-2271 (2006)
[13]	H. P. Hjalmarson, R. L. Pease, and R. A. Devine, IEEE Trans. Nucl. Sci., 55: 3009-3015 (2008)
[14]	R. L. Pease, R. D. Schrimpf, and D. M. Fleetwood, IEEE Trans. Nucl. Sci., 56: 1894-1908 (2009)
[15]	Z. E. Fleetwood, A. S. Cardoso, I. Song et al, IEEE Trans. Nucl. Sci., 61: 2915-2922 (2014)

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Mo-Han Liu, Wu Lu, Wu-Ying Ma, Xin Wang, Qi Guo, Cheng-Fa He, Ke Jiang, Xiao-Long Li and Ming-Zhu Xun. Total ionizing dose effects of domestic SiGe HBTs under different dose rates[J]. Chinese Physics C, 2016, 40(3): 036003. doi: 10.1088/1674-1137/40/3/036003

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Received: 2015-04-07
Revised: 2015-10-14

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1.
沈阳化工大学材料科学与工程学院沈阳 110142

Total ionizing dose effects of domestic SiGe HBTs under different dose rates

Corresponding author: Mo-Han Liu,

Corresponding author: Wu Lu,

1. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
2. School of Physics Science and Technology, Xinjiang University, Urumqi 830046, China
3. Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China

Received Date: 2015-04-07
Accepted Date: 2015-10-14
Available Online: 2016-02-29

Abstract: The total ionizing radiation (TID) response of commercial NPN silicon germanium hetero-junction bipolar transistors (SiGe HBTs) produced domestically are investigated under dose rates of 800 mGy(Si)/s and 1.3 mGy(Si)/s with a Co-60 gamma irradiation source. The changes of transistor parameters such as Gummel characteristics, and excess base current before and after irradiation, are examined. The results of the experiments show that for the KT1151, the radiation damage is slightly different under the different dose rates after prolonged annealing, and shows a time dependent effect (TDE). For the KT9041, however, the degradations of low dose rate irradiation is higher than for the high dose rate, demonstrating that there is a potential enhanced low dose rate sensitivity (ELDRS) effect for the KT9041. The possible underlying physical mechanisms of the different dose rates responses induced by the gamma rays are discussed.