<SUP>60</SUP>Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

WANG Yan-Ping; LUO Yin-Hong; WANG Wei; ZHANG Ke-Ying; GUO Hong-Xia; GUO Xiao-Qiang; WANG Yuan-Ming

doi:10.1088/1674-1137/37/5/056201

Chinese Physics C> 2013, Vol. 37> Issue(5) : 056201 DOI: 10.1088/1674-1137/37/5/056201

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Abstract
HTML
Reference
Related

PDF

Abstract：
The testing techniques and experimental methods of the ⁶⁰Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.

References

[1]

WU Y F, Kapolnek D, Ibbetson J P et al. IEEE Trans Electron Devices, 2001, 48(3): 586-590[2] LUO B, Johnson J W, REN F et al. Journal of Electronic Materials, 2002, 31(5): 437-441[3] Look D C, Reynolds D C, Hemsky J W et al. Phys. Rev. Lett., 1997, 79(12): 2273-2276[4] LUO B, Johnson J W, REN F et al. Appl. Phys. Lett., 2002, 80(4): 604-606[5] Aktas O, Kuliev A, Kumar V. Solid-State Electronics, 2004, 48: 471-475[6] Mcclory J W, Petrosky J C, Sattler J M et al. IEEE Trans Nucl. Sci., 2007, 54(6): 1946-1952[7] Uhlman T A. Air Force Institute of Technology (AU), Wright-Patterson AFB OH, March 2005[8] White B D, Bataiev M, GOSS S H et al. IEEE Trans Nucl. Sci., 2003, 50(6): 1934-1941[9] HU X, Choi B K, Barnaby H J et al. IEEE Trans Nucl. Sci., 2004, 51(2): 293-297[10] Sattler J S. Air Force Institute of Technology (AU), Wright-Patterson AFB OH, March 2004[11] WANG C W, SONG B S, CHEN J Y et al. J Apple Phys., 2000, 88(11): 6355-6358[12] Umana-Membreno G A, Dell J M, Hessler T P et al. Appl. Phys. Lett., 2002; 80(23): 4354-4356[13] LUO B, Johnson J W, REN F et al. Appl. Phys. Lett., 2001, 79(14): 2196-2203[14] Vitusevich S A, Klein N, Belyaev A E et al. Phys Status Solidi A, 2003, 195(1): 101-105[15] Vituserich S A, Klein N, Belyaev A E et al. Mat. Res. Soc. Symp., 2002, 719: F5.4.1[16] FAN L, ZHANG J C, LI P X et al. Chinese Journal of Semiconductors, 2003, 24(9): 937-940 (in Chinese)[17] Ambacher O, Foutz B, SMART J et al. Journal of Applied Physics, 2000, 87: 334-344[18] Foutz B E, Ambacher O, Murphy M J. Physica Status Solidi B-Basic Research, 1999, 216: 415-418[19] Kalavagunta A. Understanding the Impact of Bulk Traps on GaN HEMT DC and RF Characteristics. Ph.D Dissertation the Graduate School of Vanderbilt University. 2009[20] Kalavagunta A, Schrimpf R D, Neifeld M. IEEE Transactions on Nuclear Science, 2004, 51: 3595-3602[21] Khanna S M, Webb J, TANG H et al. IEEE Trans. Nucl. Sci., 2000, 47: 2322

[1]	Ren-Zhuo Wan , Si-Yuan Wang , Shuang Li , Yi-Ming Feng , Feng Liu , Fan Yang , Dai-Cui Zhou . Large angle radiation effect on jet measurement in pp collisions at s=7 TeV at the LHC. Chinese Physics C, 2018, 42(11): 114001. doi: 10.1088/1674-1137/42/11/114001
[2]	null . Scale-invariance in soft gamma repeaters. Chinese Physics C, 2017, 41(6): 065104. doi: 10.1088/1674-1137/41/6/065104
[3]	Rajnikant Makwana , S. Mukherjee , Jian-Song Wang , Zhi-Qiang Chen . New empirical formula for (γ, n) reaction cross section near GDR peak for elements with Z≥60. Chinese Physics C, 2017, 41(4): 044105. doi: 10.1088/1674-1137/41/4/044105
[4]	CAO Qing-Hong , WANG Hao-Ran , ZHANG Ya . Probing HZγ and Hγγ anomalous couplings in the process e⁺e^-→Hγ. Chinese Physics C, 2015, 39(11): 113102. doi: 10.1088/1674-1137/39/11/113102
[5]	LU Yi , SONG Zhao-Hui , LI Gang , TAN Xin-Jian , ZHAO Xiao-Chuan , ZHANG Kan . Study of neutron radiation effect in LaBr₃ scintillator. Chinese Physics C, 2015, 39(10): 106003. doi: 10.1088/1674-1137/39/10/106003
[6]	ZENG Guo-Qiang , ZHANG Qing-Xian , LI Chen , TAN Cheng-Jun , GE Liang-Quan , GU Yi , CHENG Feng . Digital logarithmic airborne gamma ray spectrometer. Chinese Physics C, 2014, 38(7): 076001. doi: 10.1088/1674-1137/38/7/076001
[7]	HU Zhi-Yuan , LIU Zhang-Li , SHAO Hua , ZHANG Zheng-Xuan , NING Bing-Xu , CHEN Ming , BI Da-Wei , ZOU Shi-Chang . Radiation induced inter-device leakage degradation. Chinese Physics C, 2011, 35(8): 769-773. doi: 10.1088/1674-1137/35/8/013
[8]	XU Yi , DAI Zhi-Min , LIU Gui-Min . Physics design of SSRF synchrotron radiation security. Chinese Physics C, 2009, 33(S2): 89-92. doi: 10.1088/1674-1137/33/S2/023
[9]	WANG Xiao-Xiong , LI Hong-Nian , WANG Peng , NI Jing-Fu , WANG Jia-Ou , QIAN Hai-Jie , KURASH Ibrahim , . Charge transfer of 1 ML C₆₀/Ag(100). Chinese Physics C, 2009, 33(11): 996-1000. doi: 10.1088/1674-1137/33/11/013
[10]	HE Bao-Ping , YAO Zhi-Bin , ZHANG Feng-Qi . A comparison of ionizing radiation damage in CMOS devices from ⁶⁰Co gamma rays, electrons and protons. Chinese Physics C, 2009, 33(6): 436-439. doi: 10.1088/1674-1137/33/6/006
[11]	ZHOU Feng-Qun , YANG Xing-Qiang , WANG Wei-Feng , LI Yong , ZHANG Fang , TUO Fei , KONG Xiang-Zhong . A formula used to subtract the effect of gamma-ray of the others to that ofmeasured reaction in measurement of cross section of nuclear reaction andits application. Chinese Physics C, 2008, 32(11): 873-876. doi: 10.1088/1674-1137/32/11/005
[12]	CHEN Jun , WANG Jian-Feng , ZHANG Ji-Cai , WANG Hui , HUANG Yong , WANG Yu-Tian , YANG Hui , JIA Quan-Jie . Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation. Chinese Physics C, 2005, 29(S1): 37-39.
[13]	JIN Yun-Fan , TIAN Hui-Xian , LIU Jie , XIE Er-Qing , WANG Zhi-Guang , ZHANG Chong-Hong , SUN You-Mei , ZHU Zhi-Yong , YAO Cun-Feng . Strong Electronic Excitation Effect of Swift Heavy Ions on C₆₀ Films. Chinese Physics C, 2004, 28(7): 781-785.
[14]	HE Yuan , XIONG Hui , LIU Wei-Jun , HAN Shao-Fei , YUAN Ping , MA Li-Zhen , ZHANG Bin , WANG Wen-Jin , WANG Yue , XIA Jia-Wen . Characteristic of the 60°C-Dipole for CSR. Chinese Physics C, 2003, 27(6): 532-536.
[15]	XU Ya-Bo , LI Hong-Nian , BAO Shi-Ning , LI Hai-Yang , QIAN Hai-Jie , LIU Feng-Qin , Kurash Ibrahim , JIA Jin-Feng , XUE Qi-Kun . Synchrotron Radiation Angle-Resolved Photoemission Study of the Orientational Phase Transition for K₃C₆₀. Chinese Physics C, 2001, 25(S1): 33-38.
[16]	JIN YunFan , YANG Ru , LIU ChangLong , YAO JiangHong . Irradiation Effect in C₆₀ Films Induced By Low Energy Ions. Chinese Physics C, 2000, 24(1): 82-86.
[17]	Zhang Tianbao , Wang Haidong , Shen Zhiqi . Measurement of the Radiation Energy in Parapositronium Two Gamma Annihilation. Chinese Physics C, 1991, 15(S3): 227-234.
[18]	Wang Yongchang , Yuan Junqian , Ren Zhongliang , Wang Huamin , Yang Jingkang , Shui Yongqing , Xiang Sicang . Cross Section Measurement of the ⁶³Cu(n,α)⁶⁰Co Reaction. Chinese Physics C, 1991, 15(S1): 73-77.
[19]	WANG Yong-Chang , YUAN Jun-Qian , REN Zhong-Liang , WANG Hua-Min , YANG Jing-Kang , SHUI Yong-Qing , XIANG Si-Cang . THE CROSS SECTION MEASUREMENT FOR THE ⁶³Cu(n,α)⁶⁰Co REACTION. Chinese Physics C, 1990, 14(10): 919-922.
[20]	WANG Yong-Chang , REN Zhong-Liang , YUAN Jun-Qian , YANG Jing-Kang , XIANG Si-Cang . THE CROSS SECTION MEASUREMENT FOR THE ⁶⁰Ni(n,p)⁶⁰Co REACTION. Chinese Physics C, 1990, 14(10): 923-926.

Access

Get Citation

WANG Yan-Ping, LUO Yin-Hong, WANG Wei, ZHANG Ke-Ying, GUO Hong-Xia, GUO Xiao-Qiang and WANG Yuan-Ming. ⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices[J]. Chinese Physics C, 2013, 37(5): 056201. doi: 10.1088/1674-1137/37/5/056201

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2012-04-18
Revised: 1900-01-01

Article Metric

Article Views(2185)
PDF Downloads(291)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Received Date: 2012-04-18

Accepted Date: 1900-01-01

Available Online: 2013-05-05

Abstract: The testing techniques and experimental methods of the ⁶⁰Co gamma irradiation effect on AlGaN/AlN/GaN high electron mobility transistors (HEMTs) are established. The degradation of the electrical properties of the device under the actual radiation environment are analyzed theoretically, and studies of the total dose effects of gamma radiation on AlGaN/AlN/GaN HEMTs at three different radiation bias conditions are carried out. The degradation patterns of the main parameters of the AlGaN/AlN/GaN HEMTs at different doses are then investigated, and the device parameters that were sensitive to the gamma radiation induced damage and the total dose level induced device damage are obtained.

HTML

Reference (1)

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

HTML

目录

60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article

60Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

HTML

目录

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices

⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices