Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

LI Hai-Xia; LI Zhan-Kui; WANG Fang-Cong; WANG Zhu-Sheng; WANG Xiu-Hua; LI Chun-Yan

doi:10.1088/1674-1137/35/7/007

Chinese Physics C> 2011, Vol. 35> Issue(7) : 635-637 DOI: 10.1088/1674-1137/35/7/007

Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

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The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.

References

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LI Hai-Xia, LI Zhan-Kui, WANG Fang-Cong, WANG Zhu-Sheng, WANG Xiu-Hua and LI Chun-Yan. Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process[J]. Chinese Physics C, 2011, 35(7): 635-637. doi: 10.1088/1674-1137/35/7/007

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Received: 2010-09-10
Revised: 2010-10-26

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沈阳化工大学材料科学与工程学院沈阳 110142

Preparation of a silicon micro-strip nuclear radiation detector by a two-step annealing process

Received Date: 2010-09-10
Accepted Date: 2010-10-26
Available Online: 2011-07-05

Abstract: The annealing process for boron implantation is a crucial step during large size nuclear radiation detector fabrication. It can reduce the lattice defects and the projection straggling. A two-step annealing process for boron implantation was developed instead of a one-step annealing process, and the reverse body resistance of a silicon micro-strip detector was significantly increased, which means that the performance of the detector was improved.