Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

LU Wu; ZHENG Yu-Zhan; WANG Yi-Yuan; REN Di-Yuan; GUO Qi; WANG Zhi-Kuan; WANG Jian-An

doi:10.1088/1674-1137/35/2/012

Chinese Physics C> 2011, Vol. 35> Issue(2) : 169-173 DOI: 10.1088/1674-1137/35/2/012

Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

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The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with <111> orientation was more sensitive to ionizing radiation than that with <100> orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.

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Enlow E W, Pease R L, Combs W et al. IEEE Trans. Nucl. Sci., 1991, 38(6): 13422 Fleetwood D M, Kosier S L, Nowlin R N et al. IEEE Trans. Nucl. Sci., 1994, 41(6): 18713 Pershenkov V S, Maslov V B, Cherepko S V et al. IEEE Trans. Nucl. Sci., 1997, 44(6): 18404 Witczak S C, Schrimpf R D, Fleetwood D M et al. IEEE Trans. Nucl. Sci., 1997, 44(6): 19895 Rashkeev S N, Cirba C R, Fleetwood D M et al. IEEE Trans. Nucl. Sci., 2002, 49(6): 26506 Sze S M. Physics of Semiconductors Devices, Second Edition, Beijing: Electronic Industry Press, 1981. 274 (in Chinese)7 Wu A, Schrimpf R D, Barnaby H J et al. IEEE Trans. Nucl. Sci., 1997, 44(6): 19148 LU Wu, YU Xue-Feng, REN Di-Yuan et al. Nuclear Techniques, 2005, 28(12): 925 (in Chinese)9 REN Di-Yuan, LU Wu, Yu Xue-Feng et al. Research Process of Solid State Electronics, 2006, 26(4): 471 (in Chinese)10 LU Wu, REN Di-Yuan, ZHENG Yu-Zhan et al. Chinese Journal of Semiconductors, 2008, 29(7): 1286

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LU Wu, ZHENG Yu-Zhan, WANG Yi-Yuan, REN Di-Yuan, GUO Qi, WANG Zhi-Kuan and WANG Jian-An. Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors[J]. Chinese Physics C, 2011, 35(2): 169-173. doi: 10.1088/1674-1137/35/2/012

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Received: 2010-05-12
Revised: 2010-06-02

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

Received Date: 2010-05-12
Accepted Date: 2010-06-02
Available Online: 2011-02-05

Abstract: The radiation effects and annealing characteristics of two types of domestic NPN bipolar junction transistors, fabricated with different orientations, were investigated under different dose-rate irradiation. The experimental results show that both types of the NPN transistors exhibit remarkable Enhanced Low-Dose-Rate Sensitivity (ELDRS). After irradiation at high or low dose rate, the excess base current of NPN transistors obviously increased, and the current gain would degrade rapidly. Moreover, the decrease of collector current was also observed. The NPN transistor with <111> orientation was more sensitive to ionizing radiation than that with <100> orientation. The underlying mechanisms of various experimental phenomena are discussed in detail in this paper.

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Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

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Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors

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