Conceptual design of Hefei Advanced Light Source (HALS) injection system

ZHANG Shan-Cai; WANG Lin; FENG Guang-Yao; WU Cong-Feng; LI Wei-Min; XU Hong-Liang; LIU Zu-Ping

doi:10.1088/1674-1137/33/S2/034

Chinese Physics C> 2009, Vol. 33> Issue(S2) : 131-134 DOI: 10.1088/1674-1137/33/S2/034

Conceptual design of Hefei Advanced Light Source (HALS) injection system

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Abstract：
The Hefei Advanced Light Source(HALS) is a super low emittance storage ring and has a very short beam life time. In order to run the ring stablely, top-up injection will be necessary. The injection system will greatly affect the quality of beam. This article first gives a physics design of the injecting system. Then the injecting system is tracked under different errors. The responses of storage beam and injecting beam are given in the article.

References

[1]

. LI Wei-Min, WANG Lin, FENG Guang-Yao et al. EPAC2008, 2136-21382. WANG Lin, FENG Guang-Yao, ZHANG Shan-Cai et al.EPAC 2008, 2142-21443. FENG Guang-Yao, WANG Lin, ZHANG Shan-Cai et al.EPAC 2008, 2016-20184. Borland M. Elegant: A Flexible SDDS-Compliant Code for Accelerator Simulation, Advanced Photon Source LS-287,September 2000

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ZHANG Shan-Cai, WANG Lin, FENG Guang-Yao, WU Cong-Feng, LI Wei-Min, XU Hong-Liang and LIU Zu-Ping. Conceptual design of Hefei Advanced Light Source (HALS) injection system[J]. Chinese Physics C, 2009, 33(S2): 131-134. doi: 10.1088/1674-1137/33/S2/034

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Received: 2009-01-06
Revised: 2009-02-10

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沈阳化工大学材料科学与工程学院沈阳 110142

Conceptual design of Hefei Advanced Light Source (HALS) injection system

Corresponding author: ZHANG Shan-Cai,

Received Date: 2009-01-06
Accepted Date: 2009-02-10
Available Online: 2009-01-08

Abstract:

The Hefei Advanced Light Source(HALS) is a super low emittance storage ring and has a very short beam life time. In order to run the ring stablely, top-up injection will be necessary. The injection system will greatly affect the quality of beam. This article first gives a physics design of the injecting system. Then the injecting system is tracked under different errors. The responses of storage beam and injecting beam are given in the article.