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Chinese Physics C> 2009, Vol. 33> Issue(11) : 944-948 DOI: 10.1088/1674-1137/33/11/003

Microstructural stability of NiO-containing spin valves annealed at room temperature

  • Microstructure of NiO-containing Co/Cu/Co spin valves (CCC-SV) annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top (TSV) and under the bottom (BSV) of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV.

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ZHANG Ai-Mei, CAI Hong-Ling, ZHAI Zhang-Yin, DU Jun, WU Xiao-Shan and JIA Quan-Jie. Microstructural stability of NiO-containing spin valves annealed at room temperature[J]. Chinese Physics C, 2009, 33(11): 944-948. doi: 10.1088/1674-1137/33/11/003
ZHANG Ai-Mei, CAI Hong-Ling, ZHAI Zhang-Yin, DU Jun, WU Xiao-Shan and JIA Quan-Jie. Microstructural stability of NiO-containing spin valves annealed at room temperature[J]. Chinese Physics C, 2009, 33(11): 944-948.  doi: 10.1088/1674-1137/33/11/003 shu
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Received: 2008-12-17
Revised: 2009-04-02
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Microstructural stability of NiO-containing spin valves annealed at room temperature

    Corresponding author: WU Xiao-Shan,
  • Received Date: 2008-12-17
  • Accepted Date: 2009-04-02
  • Available Online: 2009-11-05

Abstract: 

Microstructure of NiO-containing Co/Cu/Co spin valves (CCC-SV) annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top (TSV) and under the bottom (BSV) of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV.

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