Microstructural stability of NiO-containing spin valves annealed at room temperature

ZHANG Ai-Mei; CAI Hong-Ling; ZHAI Zhang-Yin; DU Jun; WU Xiao-Shan; JIA Quan-Jie

doi:10.1088/1674-1137/33/11/003

Chinese Physics C> 2009, Vol. 33> Issue(11) : 944-948 DOI: 10.1088/1674-1137/33/11/003

Microstructural stability of NiO-containing spin valves annealed at room temperature

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Abstract：
Microstructure of NiO-containing Co/Cu/Co spin valves (CCC-SV) annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top (TSV) and under the bottom (BSV) of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV.

References

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ZHANG Ai-Mei, CAI Hong-Ling, ZHAI Zhang-Yin, DU Jun, WU Xiao-Shan and JIA Quan-Jie. Microstructural stability of NiO-containing spin valves annealed at room temperature[J]. Chinese Physics C, 2009, 33(11): 944-948. doi: 10.1088/1674-1137/33/11/003

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Received: 2008-12-17
Revised: 2009-04-02

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沈阳化工大学材料科学与工程学院沈阳 110142

Microstructural stability of NiO-containing spin valves annealed at room temperature

Corresponding author: WU Xiao-Shan,

Received Date: 2008-12-17
Accepted Date: 2009-04-02
Available Online: 2009-11-05

Abstract:

Microstructure of NiO-containing Co/Cu/Co spin valves (CCC-SV) annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top (TSV) and under the bottom (BSV) of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV.