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Chinese Physics C> 2009, Vol. 33> Issue(11) : 935-943 DOI: 10.1088/1674-1137/33/11/002

In-situ monitoring of EuTiO3 and SrTiO3 film growth using time-resolved X-ray scattering during pulsed-laser deposition

  •  (Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China)

  • Time-resolved X-ray scattering was employed to in-situ monitor the epitaxial growth process of the thin films and multilayers of EuTiO3 and SrTiO3 during pulsed laser deposition. The temporal intensity oscillations of the reflected X-rays at anti-Bragg position and the transient processes following the flux pulses were observed. The temporal intensity oscillations were used to control the film thickness, and the reflectivity along the crystal truncation rod was used to measure both the film thickness and the surface/interface roughness. The primary features of the X-ray intensity oscillations were reproduced via simulating the experimental data using diffusive rate equation model. Several mechanisms of determining the X-ray intensity features were discerned.

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    [1] . WILLMOTT P R. Progress in Surface Science, 2004, 76:1632. WANG Huan-Hua, FLEET Aaron, BROCK Joel D et al.J. Appl. Phys., 2004, 96(9): 53243. Als-Nielsen J, McMorrow D. Elements of Modern X-ray Physics. New York: Wiley, 20014. HEADRICK R L, KYCIA S, WOLL A R et al. Phys. Rev.B, 1998, 58: 48185. HEADRICK R L, KYCIA S, PARK Y K et al. Phys. Rev.B, 1995, 54: 146866. FLEET A, DALE D, SUZUKI Y et al. Phys. Rev. Lett.,2005, 94: 0361027. NISHIMURA T, IKEDA A, NAMBA H et al. Surf. Sci.,1999, 421: 2738. ZEGENHAGEN J, HAAGE T, JIANG Q D. Appl. Phys.A: Matter. Sci. Proc., 1998, 67: 7119. LIPPMAA M, NAKAGAWA N, KAWASAKI M et al.Appl. Phys. Lett., 2000, 76: 243910. COHEN P I, Petrich G S, Pukite P R et al. Surf. Sci., 1989,216: 22211. ERES G, TISCHLER J Z, YOON M et al. Appl. Phys.Lett., 2002, 80: 3379

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WANG Huan-Hua. In-situ monitoring of EuTiO3 and SrTiO3 film growth using time-resolved X-ray scattering during pulsed-laser deposition[J]. Chinese Physics C, 2009, 33(11): 935-943. doi: 10.1088/1674-1137/33/11/002
WANG Huan-Hua. In-situ monitoring of EuTiO3 and SrTiO3 film growth using time-resolved X-ray scattering during pulsed-laser deposition[J]. Chinese Physics C, 2009, 33(11): 935-943.  doi: 10.1088/1674-1137/33/11/002 shu
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Received: 2008-12-17
Revised: 2009-03-31
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In-situ monitoring of EuTiO3 and SrTiO3 film growth using time-resolved X-ray scattering during pulsed-laser deposition

    Corresponding author: WANG Huan-Hua,
  • (Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China)
  • Received Date: 2008-12-17
  • Accepted Date: 2009-03-31
  • Available Online: 2009-11-05

Abstract: 

Time-resolved X-ray scattering was employed to in-situ monitor the epitaxial growth process of the thin films and multilayers of EuTiO3 and SrTiO3 during pulsed laser deposition. The temporal intensity oscillations of the reflected X-rays at anti-Bragg position and the transient processes following the flux pulses were observed. The temporal intensity oscillations were used to control the film thickness, and the reflectivity along the crystal truncation rod was used to measure both the film thickness and the surface/interface roughness. The primary features of the X-ray intensity oscillations were reproduced via simulating the experimental data using diffusive rate equation model. Several mechanisms of determining the X-ray intensity features were discerned.

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