Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

YU Wen-Jie; ZHANG Zheng-Xuan; HE Wei; TIAN Hao; CHEN Ming; WANG Ru; BI Da-Wei; ZHANG Shuai; WANG Xi

doi:10.1088/1674-1137/32/12/009

Chinese Physics C> 2008, Vol. 32> Issue(12) : 989-991 DOI: 10.1088/1674-1137/32/12/009

Investigation on a solution to improve the irradiation reliability of SOI NMOSFET

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Abstract：
A solution is developed to improve the irradiation reliability of SOI NMOSFET (N-type Metal Oxide Semiconductor Field Effect Transistor). This solution, including SOI (Silicon On Insulator) wafer hardening and transistor structure hardening, protects the SOI circuit from total dose irradiation effect.

References

[1]

. Jean-Pierre Colinge. Silicon-on-Insulator Technology: Materials to VLSI. Boston, Massachusetts, USA: Kluwer Academic Publishers, 19972. Ferlet-Cavrois V, Musseau O, Flament O, Leray J L, Pelloie J L, Raynaud C, Faynot O. IEEE Trans. Nucl. Sci.,1998, 45: 24583. Ferlet-Cavrois V, Colladant T, Paillet P, Leray J L,Musseau O, Schwank J R, Shaneyfelt M R, Pelloie J L.IEEE Trans. Nucl. Sci., 2000, 47(6): 21834. LIU S T, Jenkins W C, Hughes H L. IEEE Trans. Nucl.Sci., 1998, 45(6): 24425. Schwank J R et al. IEEE Trans. Nucl. Sci., 2003, 50: 5226. Giraldo A et al. Solid-State Electronics, 2000, 44: 9817. LIU S T et al. IEEE Trans. Nucl. Sci., 1999, 46: 18178. Hughes H L et al. IEEE Trans. Nucl. Sci., 2003, 50: 5009. Iwayama T S et al. Microelectronics Reliability, 2000, 40:849

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YU Wen-Jie, ZHANG Zheng-Xuan, HE Wei, TIAN Hao, CHEN Ming, WANG Ru, BI Da-Wei, ZHANG Shuai and WANG Xi. Investigation on a solution to improve the irradiation reliability of SOI NMOSFET[J]. Chinese Physics C, 2008, 32(12): 989-991. doi: 10.1088/1674-1137/32/12/009

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Received: 2008-04-01
Revised: 2008-05-29

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