FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

  • SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO2 films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO2 films after high-energy Pb ion irradiation. It was also found that CO2 molecule was formed in the high dose C-doped SiO2 films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO2 molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO2 films after high-energy Pb ion irradiation.
  • 加载中
  • [1] Canham L T. App.Phys.Lett. ,1990, 57:10462 Cullis A G, Canham L T, Calott D J. J . Appl. Phys.,1997, 82(3):9093 Brus L. J. Phys. Chem.,1994, 98:35154 Coffa S, Franzò C, Priolo F et al. Nucl. Instrum. Methods, 1996,B120:74-80; Komoda T, Weber J,Homewood K P et al. Nucl.Instorm. Methods,1996, B120:93-96; Tsutomu Shimizu-Iwayama, Setsuo Nakao, Kazuo Saitoh. Nucl.Instrum. Methods,1996, B120:97-100; Garrido B, López M, Ferre S et al. Nucl. Instmm. Methods,1996, B120:101-105; Skompa W, Yankov R A, Rebohle L et al.Nucl. Instrum. Methods,1996, B120:106-109; Barklie R C. Nucl.Instrum. Methods,1996, B120:139-1465 Garrido B, López M. Nucl. Instmm. Methods, 2004, B216:2136 XIE Er-Qing, WANG Zhi-Guang, JIN Yun-Fan. Nuclear Physics Review, 1998, 15(3):166 (in Chinese)(谢二庆,王志光,金运范.原子核物理评论.1998, 15(3):166)7 JIN Yun-Fan, WANG Zhi-Guang. Nuclear Physics Review, 1998,15(2):88 (in Chinese)(金运范,王志光.原子核物理评论.1998, 15(2):88)8 WANG Zhi-Guang, JIN Yun-Fan, HOU Ming-Dong. Nuclear Physics Review, 2000, 17(2):100(in Chinese)(王志光,金运范,侯明东.原子核物理评论.2000, 17(2):100)9 Tarus J, Nordlund K, Keinonen J et al. Nucl. Instmm. Methods,2000,B164:165; Girard J C, Michel A, Tromas C et al. Nucl. Instrum. Methods,2003, B209:85;Som T, Satpati B, Satyam P V et al.Nucl. Instmm. Methods,2003, B212:15110 WANG Zhi-Guang et al. Nuclear Physics Review, 2000, 17(2):189(in Chinese)(王志光等.原子核物理评论.2000, 17(2):189)11 WANG Z G et al. Nucl. Instrum. Methods,2001,B179:L289; WANG Z G, LIU J, ZHU Z Y et al. Nucl. Instmm. Methods,2002, B191:396; WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instmm. Methods,2002, B193:685; WANG Z G, JIN Y F, XIE E Q et al. Nucl. Instrum. Methods,2003, B209:20012 KE Yi-Kan, DONG Hui-Ru. Spectral Analysis. Beijing: Chemical Industry Press,1998 (in Chinese)(柯以侃,董慧茹.光谱分析.北京:化学工业出版社出版,1998)13 Lucovsky G, YANG J, CHAO S S et al. Phys. Rev.,1983,B28(6):322514 Lucovsky G, Manitini M J, Srivastava J K et al. J. Vac. Sci. Tech.,1987, B5:53015 Bullot J, Schmidt M P. Phys. Status. Solidi.,1987, B143:34516 IR Frequencies. www. personal. PSU. edu17 GUAN Zheng-Pin, CAI Guo-Qiang, WU Wen-Fa et al. Nanometer Communication, 2004 ,11(1):1 (in Chinese)(管正平,蔡国强,吴文发等纳米通讯,2004,11(1):1)18 WANG Jian-Jun, Rangel E C, da Cruz N C et al. Nucl. Instnum.Methods, 2000, B166-167:42019 YU M B et al. Thin Solid Films, 2000, 377-378:17720 WANG Zhi-Guang et al. IMPHIRFL Annual Report . 2003 , 55
  • 加载中

Get Citation
ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829.
ZHAO Zhi-Ming, WANG Zhi-Guang, SONG Yin, JIN Yun-Fan and SUN You-Mei. FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation[J]. Chinese Physics C, 2005, 29(8): 824-829. shu
Milestone
Received: 2004-11-25
Revised: 1900-01-01
Article Metric

Article Views(2902)
PDF Downloads(572)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

FTIR Study of C-Implanted SiO2 after High-Energy Pb-ion Irradiation

    Corresponding author: ZHAO Zhi-Ming,
  • Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China2 CIRIL,BP5133,14070 Caen Cedex 05,France3 The Graduated School of Chinese Academy of Sciences,Beijing 100049,China

Abstract: SiO2 films were firstly implanted at room temperature (RT) with 120 keV C-ions to a dose of 2.0×1017, 5.0×1017 or 8.6×1017 C cm-2, and then the C-doped SiO2 films were irradiated at RT with 950 MeV Pb ions to a fluence of 5.0×1011, 1.0×1012 or 3.8×1012 Pb cm-2, respectively. The Fourier Transformation Infrared (FTIR) spectra of these samples were measured using a Spectrum GX IR spectroscopy. From the obtained micro-FTIR Spectra, we found that significant chemical bonds such as Si-C and Si(C)-O-C bonds were formed in the C doped SiO2 films after high-energy Pb ion irradiation. It was also found that CO2 molecule was formed in the high dose C-doped SiO2 films after large fluence Pb ion irradiations. The existence of a large number of Si-C bonding and CO2 molecule implies that nano-sized Si cluster and/or SiC grains may form in the C doped SiO2 films after high-energy Pb ion irradiation.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return