Study of Defects in Silicon Irradiated With High Energy Ar Ions

Get Citation
Zhu Zhiyong, Hou Mingdong, Jin Yunfan, Li Changlin, Liu Changlong, Zhang Chonghong and Sun Youmei. Study of Defects in Silicon Irradiated With High Energy Ar Ions[J]. Chinese Physics C, 1999, 23(12): 1248-1252.
Zhu Zhiyong, Hou Mingdong, Jin Yunfan, Li Changlin, Liu Changlong, Zhang Chonghong and Sun Youmei. Study of Defects in Silicon Irradiated With High Energy Ar Ions[J]. Chinese Physics C, 1999, 23(12): 1248-1252. shu
Milestone
Received: 1998-12-11
Revised: 1900-01-01
Article Metric

Article Views(2665)
PDF Downloads(668)
Cited by(0)
Policy on re-use
To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.
通讯作者: 陈斌, bchen63@163.com
  • 1. 

    沈阳化工大学材料科学与工程学院 沈阳 110142

  1. 本站搜索
  2. 百度学术搜索
  3. 万方数据库搜索
  4. CNKI搜索

Email This Article

Title:
Email:

Study of Defects in Silicon Irradiated With High Energy Ar Ions

    Corresponding author: Zhu Zhiyong,
  • Institute of,Wodern Physics,The Chinese Academy of Sciences,Lanzhou 730000

Abstract: Single crystalline silicon specimens are irradiated at room temperatUre with 750MeV argon ions. Positron lifetime, electron paramagnetic resonance as well as infrared optical absorphon measurementS are conducted tO study the radiahon induced defects in the specimens. It is found that neutral divacancies are the main vacancy clusters induced by the irradiations. UP to 4.3×1014ions/cm2 no amorphous phase is detected. At the end of the range the divacancy concentrahon increases dramahcally with increasing dose whereas in the electronic processes dominating area the concentration of divacancy saturates. It is therefore proposed that the radiahon induced defects can be annealed by the energy deposihon through electronic processes.

    HTML

Reference (1)

目录

/

DownLoad:  Full-Size Img  PowerPoint
Return
Return