Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits

  • A simple theoretical model based on plasma physics is presented to analyze the microwave plasma effects on the electronic circuits. Results show that under certain parameter conditions the threshold for damaging the electronic circuits decreases with the decrease of the frequency of the high-power microwave. In addition, the oscillation amplitudes of the plasma electrons increase dramatically when the plasma frequency is near the high-power microwave frequency, which can easily damage the electronic circuits.
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  • [1] . SHEN Ju-Ai, HUANG Wen-Hua, LIU Guo-Zhi. High Power Leaser and Particle Beams, 1999(in Chinese)(申菊爱, 黄文华, 刘国治. 强激光与粒子束, 1999)2. WANG Chang-He. Semiconductor Information, 1997,34(1): 9-16(in Chinese)(王长河. 半导体情报, 1997, 34(1): 9—16)3. FANG Jin-Yong, LIU Guo-Zhi, LI Ping et al. High Power Leaser and Particle Beams, 1999, 11(5): 639-642(in Chinese)(方进勇, 刘国治, 李平等. 强激光与粒子束, 1999, 11(5): 639—642)4. ZHANG Yong-Hua, YANG Zhi-Qiang, LI Ping et al. High Power Leaser and Particle Beams, 2005, 17(2): 233-236(in Chinese)(章勇华, 杨志强, 李平等. 强激光与粒子束, 2005, 17(2): 233—236)5. LIU Yong-Bo, FAN Xiang, HAN Tao. Technology of Electron-Confrontment, 2003, 18(4): 41-45(in Chinese)(刘勇波, 樊涛. 电子对抗技术, 2003, 18(4): 41—45)6. FANG Jin-Yong, SHEN Ju-Ai, YANG Zhi-Qiang et al.High Power Leaser and Particle Beams, 2003, 15(6): 591-594(in Chinese)(方进勇, 杨志强等. 强激光与粒子束, 2003, 15(6): 591—594)7. LI Ping, LIU Guo-Zhi, HUANGWen-Hua et al. High Power Leaser and Particle Beams, 2001, 13(3): 353-356(in Chinese)(李平, 刘国治, 黄文华等. 强激光与粒子束, 2001, 13(3): 353—356)
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YANG Yi-Ming, ZHU Zhan-Ping, ZENG Ji-Lai and QIAN Bao-Liang. Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits[J]. Chinese Physics C, 2008, 32(S1): 184-186.
YANG Yi-Ming, ZHU Zhan-Ping, ZENG Ji-Lai and QIAN Bao-Liang. Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits[J]. Chinese Physics C, 2008, 32(S1): 184-186. shu
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Received: 2008-01-10
Revised: 1900-01-01
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Theoretical Analysis of the Interaction between the High-Power Microwave andthe Electronic Circuits

    Corresponding author: YANG Yi-Ming,

Abstract: A simple theoretical model based on plasma physics is presented to analyze the microwave plasma effects on the electronic circuits. Results show that under certain parameter conditions the threshold for damaging the electronic circuits decreases with the decrease of the frequency of the high-power microwave. In addition, the oscillation amplitudes of the plasma electrons increase dramatically when the plasma frequency is near the high-power microwave frequency, which can easily damage the electronic circuits.

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