Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

CHEN Jun; WANG Jian-Feng; ZHANG Ji-Cai; WANG Hui; HUANG Yong; WANG Yu-Tian; YANG Hui; JIA Quan-Jie

Chinese Physics C> 2005, Vol. 29> Issue(S1) : 37-39

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Abstract
HTML
Reference
Related

PDF

Abstract：
By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction,existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.

References

[1]

. Kato Y, Kitamura S, Hiramatsu K et al. J. of Cryst.Growth, 1994, 144: 133—1402. Nakamura S. In: Proceedings of the Second InternationalConference on Nitride Semiconductor, Tokushima, 19973. Dovidenko K, Oktyabrsky S, Narayan J. J. Appl. Phys.,1997, 82(9): 4296—42994. Rebane Y T, Shreter Y G, Albrecht M. Phys. Stat. Sol.,(a) 1997, 164: 141—1445. Fischer S, Steude G, Hofmann D M et al. J. Cryst. Growth,1998, 189/190: 556—5606. BAI J, Dudley M, CHEN L et al. J. Appl. Phys., 2005,97(11): 1161017. LIU R, Bell A, Ponce F A et al. Appl. Phys. Lett., 2005,86(2): 21908

[1]	WANG Yan-Ping , LUO Yin-Hong , WANG Wei , ZHANG Ke-Ying , GUO Hong-Xia , GUO Xiao-Qiang , WANG Yuan-Ming . ⁶⁰Co gamma radiation effect on AlGaN/AlN/GaN HEMT devices. Chinese Physics C, 2013, 37(5): 056201. doi: 10.1088/1674-1137/37/5/056201
[2]	CUI Yan-Li , YI Rong-Qing , DU Hua-Bing , ZHAO Yi-Dong , CUI Ming-Qi , ZHENG Lei . Calibration of XRD Detector and Filter on the 3B3 Medium Energy X-Ray Beam in BSRF. Chinese Physics C, 2006, 30(9): 912-915.
[3]	LIU Ying-Bin , GAO Yu-Xi , CHEN Chun-Ying , LI Bai , YU Hong-Wei , WANG Jiang-Xue , HE Wei , HUANG Yu-Ying , CHAI Zhi-Fang . Quantitative Analysis of Iron in Protein Bands Existing in Polyacrylamide Gel Matrix with Synchrotron Radiation. Chinese Physics C, 2005, 29(S1): 61-64.
[4]	SHEN Da-Wa , YU Hui , WU Zong-Hua , HUANG Yong . The Morphology of CDA-g-PMMA Copolymers in Solution Studied by SR-SAXS. Chinese Physics C, 2005, 29(S1): 8-11.
[5]	YANG Kai-Feng , CUI Qi-Liang , MA Yan-Mei , ZHAO Yu , LI Bing , WANG Yi , ZHOU Qiang , LUO Cong-Ju , LIU Jing , ZOU Guang-Tian . Synchrotron Radiation Diffraction of Tellurium Under High Pressure And High Temperature. Chinese Physics C, 2005, 29(S1): 123-125.
[6]	WU Xiao-Shan , CAI Hong-Ling , TAN Wei-Shi , ZHAI Zhang-Yin , WU Zong-Hua , JIA Quan-Jie , ZHENG Hong-Xiang , JIANG Shu-Shen . Effects of Growth Temperature of Si Buffer Layer on Structure and Composition in GeSi Epitaxy Layers on Si Wafer. Chinese Physics C, 2005, 29(S1): 24-27.
[7]	ZHANG Hui , WANG Bao-Yi , ZHANG Zhe , WANG Ping , WEI Long , JIA Quan-Jie , WANG Yu-Zhu . Experimental studies on FeS₂ films prepared on Si (100) substrates by synchrotron radiation surface X-ray diffraction method. Chinese Physics C, 2005, 29(S1): 32-36.
[8]	YU Fu-Sheng , YUAN Wan-Ming , HAN Song , JIN Ke , HUANG Yu-Ying , HE Wei , DONG Jin-Quan , JIA Xiu-Qin , CAO Jie , WANG Hong-Yue . Measurements of Trace Elements in Melt Inclusions by Synchrotron Radiation X-Ray Fluorescence Microprobe Techniques. Chinese Physics C, 2004, 28(6): 675-678.
[9]	XIANG Dao , HUANG Wen-Hui , HE Xiao-Zhong . Impact of Coherent Synchrotron Radiation on Beam Qualities in a Chicane. Chinese Physics C, 2004, 28(5): 555-559.
[10]	ZHANG Zhi-Yong , LIU Nian-Qing , LI Fu-Liang , HUANG Yu-Ying , HE Wei , Lei Hao , ZHOU Zhen-You . The Manganese Distribution in Olfactory Bulbs of Rat Measured by Synchrotron Radiation X-ray Fluorescence. Chinese Physics C, 2003, 27(S1): 114-117.
[11]	ZHOU Chun-Lan , WANG Dan-Ni , HE Chuang-Xin , WANG Bao-Yi , WEI Long , HE Qing , JIA Quan-Jie . Study on Pores and Defect by Synthrotron Radiation Small Angle Reflection Method and Slow Positron Annihilation Technique. Chinese Physics C, 2003, 27(S1): 67-71.
[12]	YU Wan-Li , LUO Yong-An , TIAN Yu-Lian , HUANG Wan-Xia , JIA Xiao-Peng . Study of the Dislocations in Large Synthesized Diamond Crystal with Synchrotron Radiation. Chinese Physics C, 2003, 27(S1): 92-96.
[13]	KANG Shi-Xiu , SUN Xia , YAO Kun , WU Zi-Qin , HUANG Yu-Ying , JU Xin , XIAN Ding-Chang . Measurement and Calculation of Escape Peak in SR-XRF Analysis. Chinese Physics C, 2001, 25(S1): 39-43.
[14]	JIANG Xiao-Ming , JIA Quan-Jie , HU Tian-Dou , HUANG Yu-Ying , ZHENG Wen-Li , HE Wei , XIAN Ding-Chang , SHI Bin , JIANG Zui-Min , WANG Xun . Study of Semiconductor Super Thin Heterostructures with Synchrotron Radiation X-Ray Standing Wave Technique. Chinese Physics C, 2001, 25(6): 588-594.
[15]	SUN Ke-Xu , YI Rong-Qing , HUANG Tian-Xuan , CUI Yan-Li , YANG Jia-Min , JIANG Shao-En , DING Yong-Kun , ZHANG Bao-Han , WANG Hong-Bin , WEN Shu-Huai , ZHENG Zhi-Jian , CUI Ming-Qi , ZHU Pei-Ping , ZHAO Yi-Dong , LI Gang , TANG E-Sheng . Applications for Synchrotron Radiation in Inertial Confinement Fusion Research. Chinese Physics C, 2001, 25(S1): 121-127.
[16]	ZHAO YiDong , CUI MingQi , ZHU Peiping , CUI CongWu . Application of Transmission Grating in Diagnoses of Synchrotron Radiation Beamline Output. Chinese Physics C, 2000, 24(11): 1043-1049.
[17]	Zhang Weigang . Correlative Degree and Collective Sideward Flow of Final State Particles in High Energy Heavy Ion Collisions. Chinese Physics C, 1999, 23(4): 367-374.
[18]	Dong Baozhong , Sheng Wenjun , Li Guangcheng , Zhang Zhijie . Small Angle Scattering Station of BEPC Synchrotron Radiation Laboratory. Chinese Physics C, 1995, 19(3): 284-288.
[19]	Wang Dewu , Liu Jianfei . Application of BSRF X-Ray Diffraction Station to Researches in Material Science. Chinese Physics C, 1995, 19(5): 473-478.
[20]	CHEN Tian-Lun , SUO Cun-Chuan . VARIATIONAL ANALYSIS OF PHASE STRUCTURE OF THE SU(2) LATTICE GAUGE THEORY WITH AN ACTION INCLUDING SIX-LINK LOOPS. Chinese Physics C, 1986, 10(2): 158-163.

Access

Get Citation

CHEN Jun, WANG Jian-Feng, ZHANG Ji-Cai, WANG Hui, HUANG Yong, WANG Yu-Tian, YANG Hui and JIA Quan-Jie. Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation[J]. Chinese Physics C, 2005, 29(S1): 37-39.

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2005-10-28
Revised: 1900-01-01

Article Metric

Article Views(2881)
PDF Downloads(749)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

Corresponding author: CHEN Jun,

Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China2 Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China

Received Date: 2005-10-28

Accepted Date: 1900-01-01

Available Online: 2005-01-02

Abstract: By means of low temperature photoluminescence and synchrotron radiation X-ray diffraction,existence of stacking faults has been determined in epitaxy lateral overgrowth GaN by metalorganic chemical vapor deposition.

HTML

Reference (1)

Study on the stacking faults in hexagonal GaN grown by epitaxy lateral overgrowth with synchrotron radiation

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article