Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

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LI Cheng, CHEN HongFang, WU Chong, ZHANG YongMing, XU ZiZong, LE Yi, SHAO ChuanFen and SHI ChangXin. Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors[J]. Chinese Physics C, 2000, 24(5): 431-438.
LI Cheng, CHEN HongFang, WU Chong, ZHANG YongMing, XU ZiZong, LE Yi, SHAO ChuanFen and SHI ChangXin. Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors[J]. Chinese Physics C, 2000, 24(5): 431-438. shu
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Received: 1999-02-24
Revised: 1900-01-01
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Radiation Hardness Properties of MSM Structure Gallium Arsenide Detectors

    Corresponding author: LI Cheng,
  • Department of Modern Physics, University of Science and Technology of China, Hefei 230027, China2 Institute of Microelectronic Technology, Shanghai Jiaotong University, Shanghai 200030, China

Abstract: Radiation hardness of a particle detector, double metal contact GaAs semiconductors has been investigated in 14 MeV neutron exposure. The leak current, the charge collection efficiency and the spectrum of MIPs are measured after 1012n/cm2 dose. The results are compared with 60Co 1.25MeV γ photons radiation. The mechanism of radiation damage and the effect on time performances of GaAs detectors are discussed. A hypothesis of the active layer distribution of the GaAs detectors based on experiment data is given. The computation agrees with test results.

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