Study on Hard X-Rays Dose Enhancement Effects for SRAM with Different Integration

GUO Hong-Xia; CHEN Yu-Sheng; HAN Fu-Bin; LUO Jian-Hui; YANG Shan-Chao; GONG Jian-Cheng; XIE Ya-Ning; HUANG Yu-Ying; HE Wei; HU Tian-Dou

Chinese Physics C> 2003, Vol. 27> Issue(12) : 1142-1146

Study on Hard X-Rays Dose Enhancement Effects for SRAM with Different Integration

Northwest Institute of Nuclear Technology,Xi’an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China

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Abstract：
Experimental results of x-rays dose enhancement effects are given for SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ rays. The ratio of radiation damage to the SRAMs irradiated with two sources are measured. The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

References

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GUO Hong-Xia, CHEN Yu-Sheng, HAN Fu-Bin, LUO Jian-Hui, YANG Shan-Chao, GONG Jian-Cheng, XIE Ya-Ning, HUANG Yu-Ying, HE Wei and HU Tian-Dou. Study on Hard X-Rays Dose Enhancement Effects for SRAM with Different Integration[J]. Chinese Physics C, 2003, 27(12): 1142-1146.

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Received: 2003-04-28
Revised: 1900-01-01

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沈阳化工大学材料科学与工程学院沈阳 110142

Study on Hard X-Rays Dose Enhancement Effects for SRAM with Different Integration

Corresponding author: GUO Hong-Xia,

Northwest Institute of Nuclear Technology,Xi’an 710024,China2 Institute of High Energy Physics,CAS,Beijing 100039,China

Received Date: 2003-04-28

Accepted Date: 1900-01-01

Available Online: 2003-12-05

Abstract: Experimental results of x-rays dose enhancement effects are given for SRAM with different integration from 16k to 4M irradiated by 20—100keV X rays in Beijing Synchrotron Radiation Facility and by cobalt source γ rays. The ratio of radiation damage to the SRAMs irradiated with two sources are measured. The relationship of radiation hardness of SRAM versus different integration for γ-rays irradiation and the damage threshold values of X-rays for SRAM with different integration are presented.

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