Turbostractic Boron Nitride Produced by Ion Bombardment

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WANG ZhenXia, WANG WenMin, RUAN MeiLing and XU XunJiang. Turbostractic Boron Nitride Produced by Ion Bombardment[J]. Chinese Physics C, 2000, 24(11): 1055-1059.
WANG ZhenXia, WANG WenMin, RUAN MeiLing and XU XunJiang. Turbostractic Boron Nitride Produced by Ion Bombardment[J]. Chinese Physics C, 2000, 24(11): 1055-1059. shu
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Received: 1999-12-02
Revised: 1900-01-01
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Turbostractic Boron Nitride Produced by Ion Bombardment

    Corresponding author: WANG ZhenXia,
  • Shanghai Institute of Nuclear Research, The Chinese Academy of Sciences, Shanghai 201800, China2 State Key Laboratory for High Peerformance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, The Chinese Academy of Sciences, Shanghai 200050, China

Abstract: Fine structures appearing in boron nitride(BN) sample bomparded by N2+ ion (60keV) were examined by JEM-200cx high-resolution transmission electron microscopy (HRTEM) at 200kV accelerating voltage. In the curved region of plate-like h-BN crystal sp2 sheets (spacing 0.33nm), it was observed that the t-BN structure with an average interplaner spacing of 0.35 nm was formed. Although the mechanism of formation of the t-BN structure is nuclear, it appears that our discussion based on the viewpoint of beam-solid interaction may be critical in understanding the growth process of the t-BN structures.

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