Study of the dose rate effect of 180 nm nMOSFETs

HE Bao-Ping; YAO Zhi-Bin; SHENG Jiang-Kun; WANG Zu-Jun; HUANG Shao-Yan; LIU Min-Bo; XIAO Zhi-Gang

doi:10.1088/1674-1137/39/1/016004

Chinese Physics C> 2015, Vol. 39> Issue(1) : 016004 DOI: 10.1088/1674-1137/39/1/016004

Study of the dose rate effect of 180 nm nMOSFETs

Abstract
HTML
Reference
Related

PDF

Abstract：
Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A "true" dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

References

[1]

Pease R L. IEEE Trans. Nucl. Sci., 2003, 50(3): 539-551[2] Johnston A H, Swimm R T, Miyahira T F. IEEE Trans. Nucl. Sci., 2010, 57(6): 3279-3287[3] Zebrev G I, Gorbunov M S. IEEE Trans. Nucl. Sci., 2009, 56(4): 2230-2236[4] HE Bao-Ping, YAO Zhin-Bin, ZHANG Feng-Qi. Chinese Physics C, 2009, 33(06): 436-439 (in Chinese)[5] MENG Xiang-Ti, HUANG Qiang, MA Yan-Xiu et al. Chinese Physics C, 2008, 32(06): 442-445 (in Chinese)[6] McLain M, Barnaby H J, Holbert K E et al. IEEE Trans. Nucl. Sci., 2007, 54(6): 2210-2217[7] Barnaby H J. IEEE Trans. Nucl. Sci., 2006, 53(6): 3103-3121[8] McLain M, Barnaby H J, Holbert K E et al. IEEE Trans. Nucl. Sci., 2007, 54(6): 2210-2217[9] McWhorter P J, Winokur P S. Appl. Phys. Lett., 2008, 48(2): 133135[10] Pease R L, Schrimpf R D, Fleetwood D M. IEEE Trans. Nucl. Sci., 2009, 56(4): 1894-1908[11] Fleetwood D M, Winkour P S, Barnes C E et al. Radiat. Phys. Chem., 1994, 33(6): 129-136[13] Witczak S C, Lacoe R C, Osborn J V et al. IEEE Trans. Nucl. Sci., 2005, 52(6): 26022608[12] Oldham T R, Lelis A J, McLean F B. IEEE Trans. Nucl. Sci., 1986, 33(6): 1894-1908[14] MIL-STD883H Test Method 1019.8, issued February 2010 by Commander, Defense Supply Center Columbus ATTN

[1]	Jun-Kui Xu , You-Wu Su , Wu-Yuan Li , Wei-Wei Yan , Zong-Qiang Li , Wang Mao , Cheng-Guo Pang , Chong Xu . Study of neutron dose equivalent at the HIRFL deep tumor therapy terminal. Chinese Physics C, 2017, 41(6): 068201. doi: 10.1088/1674-1137/41/6/068201
[2]	Mo-Han Liu , Wu Lu , Wu-Ying Ma , Xin Wang , Qi Guo , Cheng-Fa He , Ke Jiang , Xiao-Long Li , Ming-Zhu Xun . Total ionizing dose effects of domestic SiGe HBTs under different dose rates. Chinese Physics C, 2016, 40(3): 036003. doi: 10.1088/1674-1137/40/3/036003
[3]	Jie Wang , Yi Wang , Bo Xie , Pengfei Lv , Fuyue Wang , Baohong Guo , Dong Han , Yuanjing Li . Online aging study of a high rate MRPC. Chinese Physics C, 2016, 40(5): 056002. doi: 10.1088/1674-1137/40/5/056002
[4]	YUAN Yao-Shuo , LI Kai-Wei , WANG Na , Yoshiro Irie , WANG Sheng . Study of the beam loading effect in the CSNS/RCS. Chinese Physics C, 2015, 39(4): 047003. doi: 10.1088/1674-1137/39/4/047003
[5]	LU Yi , SONG Zhao-Hui , LI Gang , TAN Xin-Jian , ZHAO Xiao-Chuan , ZHANG Kan . Study of neutron radiation effect in LaBr₃ scintillator. Chinese Physics C, 2015, 39(10): 106003. doi: 10.1088/1674-1137/39/10/106003
[6]	LI Chao , ZHANG Zhi-Lei , QI Xin , XU Xian-Bo , HE Yuan , YANG Lei . Beam dynamics study of RFQ for CADS with a 3D space-charge-effect. Chinese Physics C, 2014, 38(3): 037005. doi: 10.1088/1674-1137/38/3/037005
[7]	CHEN Ze , HU Zheng-Guo , CHEN Jin-Da , ZHANG Xiu-Ling , GUO Zhong-Yan , XIAO Guo-Qing , SUN Zhi-Yu , HUANG Wen-Xue , WANG Jian-Song . A simulation study of a dual-plate in-room PET system for dose verification in carbon ion therapy. Chinese Physics C, 2014, 38(8): 088202. doi: 10.1088/1674-1137/38/8/088202
[8]	GUAN Xing-Yin , SONG Zhao-Hui , HAN He-Tong . Fluence rate linear response limit of a scintillators to γ-rays. Chinese Physics C, 2011, 35(7): 656-659. doi: 10.1088/1674-1137/35/7/010
[9]	CUI Ming-Qi , CHEN Kai , ZHAO Jia , SUN Li-Juan , XI Shi-Bo , YAN Fen . Performance of a polarizer using synthetic mica crystal in the 12--25 nm wavelength range. Chinese Physics C, 2011, 35(5): 509-513. doi: 10.1088/1674-1137/35/5/021
[10]	LU Wu , ZHENG Yu-Zhan , WANG Yi-Yuan , REN Di-Yuan , GUO Qi , WANG Zhi-Kuan , WANG Jian-An . Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors. Chinese Physics C, 2011, 35(2): 169-173. doi: 10.1088/1674-1137/35/2/012
[11]	ZHANG Meng , ZHAO Ming-Hua , WANG Bao-Liang . Study of multipacting effect in sub-harmonic buncher of SSRF linac. Chinese Physics C, 2009, 33(S2): 86-88. doi: 10.1088/1674-1137/33/S2/022
[12]	ZHENG Yu-Zhan , LU Wu , REN Di-Yuan , WANG Gai-Li , YU Xue-Feng , GUO Qi . ELDRS and dose-rate dependence of vertical NPN transistor. Chinese Physics C, 2009, 33(1): 47-49. doi: 10.1088/1674-1137/33/1/010
[13]	ZHANG Meng , ZHAO Ming-Hua . Study of multipacting effect in superconducting cavity. Chinese Physics C, 2008, 32(10): 846-848. doi: 10.1088/1674-1137/32/10/016
[14]	Farshid Tabbakh , Azim Ahmadinyar . Analytical and statistical calculation of gamma dose rate for the accident of losing the shield for Tehran Research Reactor. Chinese Physics C, 2008, 32(11): 877-881. doi: 10.1088/1674-1137/32/11/006
[15]	GONG Hui , LI Jin , YANG Shi-Ming , SHAO Bei-Bei , GONG Guang-Hua , LI Yu-Xiong , XIE Xiao-Xi . Study of the Features of 400nm IMPL RADFET Dosimeter. Chinese Physics C, 2007, 31(3): 283-287.
[16]	LIU Jian-Feng , JIA Min , ZHAO Wei-Juan . Study on the Giant Dipole Resonance Model for γ Production Mechanisms Induced by Fast Nutrons in the Nuclear Mass Region 180≤A≤210. Chinese Physics C, 2003, 27(5): 430-435.
[17]	ZHANG Yu-Hu . Experimental Study of High-Spin States in Deformed Odd-Odd ¹⁸⁰ Ir. Chinese Physics C, 2002, 26(6): 582-588.
[18]	GUO Hong-Xia , CHEN Yu-Sheng , ZHANG Yi-Men , ZHOU Hui , HAN Fu-Bin , GUAN Ying , GONG Jian-Chen . Experimental Study of X-Ray Induced Dose Enhancement Effect Using Synchrotron Radiation. Chinese Physics C, 2001, 25(S1): 1-6.
[19]	ZHANG Yu-Hu , ZHAO Qing-Zhong , ZHANG Shuang-Quan , ZHOU Xiao-Hong , XU Hu-Shan , HUANG Wen-Xue , GUO Ying-Xiang , LEI Xiang-Guo , LIU Zhong , LU Jun , FENG Xi-Chen , GOU Quan-Bu , , , , . Experimental Study of High-spin States in Odd-Odd Nuclei around 160-180 Mass Region. Chinese Physics C, 2000, 24(S1): 21-28.
[20]	Zhang Tianbao , Yang Guangming , Guo Baonian , Wang Haidong . Experimental Investigation of the Decay Rate of Orthopositronium. Chinese Physics C, 1992, 16(S2): 135-140.

Access

Get Citation

HE Bao-Ping, YAO Zhi-Bin, SHENG Jiang-Kun, WANG Zu-Jun, HUANG Shao-Yan, LIU Min-Bo and XIAO Zhi-Gang. Study of the dose rate effect of 180 nm nMOSFETs[J]. Chinese Physics C, 2015, 39(1): 016004. doi: 10.1088/1674-1137/39/1/016004

RIS(for EndNote,Reference Manager,ProCite)

BibTex

Txt

Milestone

Received: 2014-03-17
Revised: 1900-01-01

Article Metric

Article Views(1924)
PDF Downloads(254)
Cited by(0)

Policy on re-use

To reuse of subscription content published by CPC, the users need to request permission from CPC, unless the content was published under an Open Access license which automatically permits that type of reuse.

通讯作者: 陈斌, bchen63@163.com

1.
沈阳化工大学材料科学与工程学院沈阳 110142

Study of the dose rate effect of 180 nm nMOSFETs

Corresponding author: HE Bao-Ping,

Received Date: 2014-03-17

Accepted Date: 1900-01-01

Available Online: 2015-01-05

Abstract: Radiation induced offstate leakage in the shallow trench isolation regions of SIMC 0.18 μm nMOSFETs is studied as a function of dose rate. A "true" dose rate effect (TDRE) is observed. Increased damage is observed at low dose rate (LDR) than at high dose rate (HDR) when annealing is taken into account. A new method of simulating radiation induced degradation in shallow trench isolation (STI) is presented. A comparison of radiation induced offstate leakage current in test nMOSFETs between total dose irradiation experiments and simulation results exhibits excellent agreement. The investigation results imply that the enhancement of the leakage current may be worse for the dose rate encountered in the environment of space.

HTML

Reference (1)

Study of the dose rate effect of 180 nm nMOSFETs

Abstract：

References

Access

Article Metrics

Metrics

通讯作者: 陈斌, bchen63@163.com

Email This Article