Radiation induced inter-device leakage degradation

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Brady F T, Maimon J, Hurt M. IEEE Trans. Nucl. Sci., 1999, 46: 18362 Manghisoni M, Ratti L, Re V, Speziali V, Traversi G, Candelori A. IEEE Trans. Nucl. Sci., 2003, 6: 18273 Re V, Manghisoni M, Ratti L, Speziali V, Traversi G. IEEE Trans. Nucl. Sci., 2006, 53: 15994 Faccio F, Cervelli G. IEEE Trans. Nucl. Sci., 2005, 52: 24135 Shaneyfelt M R, Dodd P E, Draper B L, Flores R S. IEEE Trans. Nucl. Sci., 1998, 45: 25836 McLain M, Barnaby H J, Holbert K E, Schrimpf R D, Shah H, Amort A, Baze M,Wert J. IEEE Trans. Nucl. Sci., 2007, 54: 22107 EN Y F, LIN C L, LUO H W, QIAN C, SHI Q, WANG X, WANG X H, WANG Y M, ZHANG E X, ZHANG Z X, ZHAO G R. Chin. Phys., 2006, 15: 7928 LI D M, WANG Z H, Huangfu L Y, GUO Q J. Chin. Phys., 2007, 16: 37609 Faccio F, Barnaby H J, CHEN X J, Fleetwood D M, Gonella L, Mclain M, Schrimpf R D. Microelectronics Reliability, 2008, 48: 100010 Witczak S C, Lacoe R C, Osborn J V, Hutson J M, Moss S C. IEEE Trans. Nucl. Sci., 2005, 52: 260211 Boesch H E, McGarrity J M. IEEE Trans. Nucl. Sci., 1976, 23: 1520