Total dose radiation and annealing responses of the backtransistor of Silicon-On-Insulator pMOSFETs

[1]
Leray J L. Microelectronics Engineering, 1988, 8: 187-200[2] Ferlet-Cavrois V, Quoizola S, Musseau O et al. IEEE Trans. Nucl. Sci., 1998, 45: 2458-2466[3] Ferlet-Cavrois V, Paillet P, Musseau O et al. IEEE Trans. Nucl. Sci., 2000, 47: 613-619[4] Brisset C, Ferlet-Cavrois V, Flament O et al. IEEE Trans. Nucl. Sci., 1996, 43: 2651-2658[5] Alvarado J, Boufouss E, Kilchytska V et al. Microelectronics Reliability, 2010, 50: 1852-1856[6] Barnaby H J. IEEE Trans. Nucl. Sci., 2006, 53: 3103-3121[7] LIU S T, Jenkins W C, Hughes H L et al. IEEE Trans. Nucl. Sci., 1998, 45: 2442-2449[8] Schwank J R, Shaneyfelt M R, Draper B L et al. IEEE Trans. Nucl. Sci., 1999, 46: 1809-1816[9] Maoa Bor-Yen, Chen Cheng-Eng, Pollack G. IEEE Trans. Nucl. Sci., 1987, 34: 1692-1697[10] LIU S T, Balster S, Sinha S et al. IEEE Trans. Nucl. Sci., 1999, 46: 1817-1823[11] Ferlet-Cavrois V, Musseau O, Leray J L et al. IEEE Trans. Electron Devices, 1997, 44: 965-971[12] Ohata A, Cristoloveanu S, Vandooren A et al. Microelectronic Engineering, 2005, 80: 245-248[13] Ferlet-Cavrois V, Colladant T, Paillet P et al. IEEE Trans. Nucl. Sci., 2000, 47: 2183-2188[14] Brothers C, Pugh R, Duggan P et al. IEEE Trans. Nucl. Sci., 1997, 44: 2134-2139[15] YU W J, WANG R, ZHANG Z X et al. HEP NP, 2007, 31: 819-822 (in Chinese)[16] TIAN H, ZHANG Z X, HE W et al. Chin. Phys. C, 2008, 32: 645-648[17] Azarewicz J L. IEEE Trans. Nucl. Sci., 1986, 33: 1420-1424[18] Witczak S C, Lacoe R C, Osborn J V et al. IEEE Trans. Nucl. Sci., 2005, 52: 2602-2608